Abstract:The morphological stability of NiSi1−uGeu ternary alloy films formed by reacting Ni with single-crystal (sc) and polycrystalline (poly) Si1−xGeu is studied (u can be different from x). The agglomeration of NiSi1−uGeu films on Si0.7Ge0.3 occurs at 550°C after rapid thermal processing for 30 s, independently of the crystallinity of the Si1−xGeu. This behavior distinctly different from NiSi: NiSi films on poly-Si display a poorer morphological stability and degrade at lower temperatures than NiSi on sc-Si. On strained Si1−xGex, the presence of Ge simultaneously gives rise to two effects of different origin: mechanical and thermodynamic. The main driving forces behind the agglomeration of NiSi1−uGeu on sc-Si1−xGex are found to be the stored strain energy in the Si1−xGex and the larger (absolute) free energy of formation of NiSi compared to NiGe. The latter constitutes the principal driving force behind the agglomeration of NiSi1−uGeu on poly-Si1−xGex and is not affected by the degree of crystallinity of Si1−xGex. The total free-energy change also includes terms corresponding to the entropy of mixing of Si and Ge in both Si1−xGex and NiSi1−uGeu. Calculations show that the strain energy and the total free-energy change can be 5–7 times (with 30at.% Ge) the surface/interface and grain-boundary energies in a NiSi film or the grain-boundary energy in an underlying poly-Si. These latter energies are responsible for the agglomeration of NiSi on sc- and poly-Si. The agglomeration takes place primarily via the interdiffusion of Si and Ge between Si1−xGex and NiSi1−uGeu. A structure likely to improve the stability of NiSi1−uGeu∕Si1−xGex is discussed.

Structural Evolution of Ge-rich Si1−xGex Films Deposited by Jet-Icpcvd

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Morphology And Microstructure Of Tensile-Strained Sige(001) Thin Epitaxial Films

Study of Si and Ge growth on Si(100) surface

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

High quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by two-step approach

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Structural Evolution During the Crystallization Process of Germanium Films Prepared by Plasma-Enhanced Chemical-Vapor-Deposition

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments

Growth and Characterization of Poly-SiGe Prepared by Reactive Thermal CVD

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

Structure analysis of SiCGe films grown on SiC

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films

Polycrystalline Silicon-Germanium Films Prepared By Aluminum-Induced Crystallization

Morphological Instability of NiSi1−uGeu on Single-Crystal and Polycrystalline Si1−xGex

Growth and Microstructure Properties of Microcrystalline Silicon Films Deposited Using Jet-Icpcvd

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition