Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

Physical and Electrical Properties of LPCVD-SiGe Thin Films

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Chemical vapor deposition of Ge films on Si1-xGex:C buffers

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Composition Analysis of Ge Graded Si<sub>1-x</sub>Ge<sub>x</sub> Alloy Films by Capacitance-Voltage Method

Determination of Ge Fraction and Carrier Concentration in Si<sub>1-X</sub>Ge<sub>x</sub>/Si by Capacitance-Voltage Method

Deposition and Characterization of Polycrystalline Si[sub 1−x]ge[sub X] Films for CMOS Transistors Gate Electrode Applications

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments

Characterization of Excimer Laser Annealed Polycrystalline Si1−xGex Alloy Thin Films by X-Ray Diffraction and Spectroscopic Ellipsometry

Cvd Growth of Ge Films on Graded Si1-Xgex: C Buffers

Thermal Transport In Molecular Beam Epitaxy Grown Si1-Xgex Alloy Films With A Full Spectrum Of Composition (X=0-1)

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Structural Evolution of Ge-rich Si1−xGex Films Deposited by Jet-Icpcvd

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Performance evaluation of polycrystalline Si1−xGex thin-film transistors fabricated by continuous-wave laser lateral crystallization on glass substrates

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions