Abstract:A consistent methodology is presented to extract carrier concentrations in n-type Ge from measurements of the infrared dielectric function and the Hall effect. In the case of the optical measurements, usually carried out using spectroscopic ellipsometry, the carrier concentration is affected by the doping dependence of the conductivity effective mass, which is computed using a model of the electronic density of states that accounts for non-parabolicity and is fit to electronic structure calculations. Carrier concentrations obtained from Hall measurements require a knowledge of the Hall factor, which is arbitrarily set equal to unit in most practical applications. We have calculated the Hall factor for n-Ge using a model that accounts for scattering with phonons and with ionized impurities. We show that determinations of the carrier concentration n using our computed effective mass and Hall factor virtually eliminates any systematic discrepancy between the two types of measurement. We then use these results to compute majority carrier mobilities from measured resistivity values, to compare with measurements of minority carrier mobilities, and to fit empirical expressions to the doping dependence of the mobilities that can be used to model Ge devices.

Determination of Ge Fraction and Carrier Concentration in Si<sub>1-X</sub>Ge<sub>x</sub>/Si by Capacitance-Voltage Method

Determination of Ge Fraction and Carrier Concentration in Si1-Xgex/Si by Capacitance-Voltage Method

Composition Analysis of Ge Graded Si<sub>1-x</sub>Ge<sub>x</sub> Alloy Films by Capacitance-Voltage Method

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

Analysis of Capacitance-Voltage Characteristics Ofsi1−xge

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

Carriers Distribution of Si1-xGex:C Buffers Grown on Si(100) by Chemical Vapor Deposition

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Physical and Electrical Properties of LPCVD-SiGe Thin Films

Carrier depth profile of Si/SiGe/Si n-p-n HBT structural materials characterized by electrochemical capacitance-voltage method

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Calculation Of Critical Layer Thickness Considering Thermal Strain In Si1-Xgex/Si Strained-Layer Heterostructures

Al/Si/Ge/Si Schottky contacts with controllable barrier heights

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Strain and Electrical Characterization of Boron-Doped Sigec Layers Grown by Chemical Vapor Deposition

Composition Determination of Si/Si1−xGex/Si by Photoreflectance Spectroscopy

Ge Segregation in Si1- x Gex Alloy Grown on Si by UHV/CVD

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Chemical vapor deposition of Ge films on Si1-xGex:C buffers