Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Ge Segregation in Si1- x Gex Alloy Grown on Si by UHV/CVD

Study of Si and Ge growth on Si(100) surface

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)

SIMS and XPS studies of GaN epilayers grown on Si substrates

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Effect of H2 on low temperature selective growth of Si1-xGex by UHV/CVD

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

An Ultrahigh Vacuum Chemical Vapor Deposition System and Si, GeSi Epitaxy on a Three-Inch Si Wafer

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Sige Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition

Study of Strain in Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum／Chemical Vapor Depostion

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD