Abstract:Material crystallinity is paramount in determining the photoelectric performances and device applications. Moreover, a high-quality crystalline layer, especially a multilayer film or a heteroepitaxial film, is continuously explored to cater for low defect density and ultrahigh structure integrity as well as low cost, yet is challenging. In this study, the crystallization effect of Ge/Si heteroepitaxial nanofilms (<100 nm) is investigated in detail to pursue low crystallization temperature and the underlying mechanism. It is demonstrated that the crystallinity and the crystallographic orientation of the underlying layer can tune the crystallization behavior of the upper-layer film. This interfacial inducing effect on crystallization originating from the buffer layer is verified on inversed architecture of the Si/Ge film and is proposed to be the microcrystal-induced crystallization (MIC) effect. Based on a point-defect model describing an order/disorder microcrystal structure, the MIC effect is flexibly supported by the results of binding energy and charge transfer via first-principles calculations for the first time. This work also provides a facile strategy and theoretical support to prepare high-crystalline multilayer films or intact crystals for urgent microelectronics and optoelectronics applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00373.Ge–Ge peak fitting and crystallinity of the Ge/a-Si specimen in Raman spectra, AFM images of samples prepared at different conditions, Raman spectra of different samples, crystallinity trend and the graph of root-mean-square (RMS) surface roughness, XRD spectra and the X-ray diffraction data of the 300 nm Ge film, unoptimized atomic structures of Ge microcrystalline, optimized atomic structures and differential charge densities, and specific values of binding energy and charge transfer (PDF)This article has not yet been cited by other publications.

Microstructure and Optical Properties of Ge Films Prepared by Ion Beam Assisted Deposition

Absorption, Structural, and Electrical Properties of Ge Films Prepared by Ion-Beam-assisted Deposition.

Studies on Infrared Absorption Loss of Antireflection Coatings on Germanium and Potassium Chloride Substrates at the Wavelength of 10.6μm by Photothermal Deflection Technique

Study on performance of Nb2O5 films with ion assisted deposition

Optical and Mechanical Properties and Microstructures of Nb2O5, Ta2O5 and SiO2 Thin Films Prepared by Ion Beam Sputtering

Effect of electron beam evaporation process parameters on infrared refractive index of Ge film

Nanocrystalline formation and optical properties of germanium thin films prepared by physical vapor deposition

Tailoring of structural and optical properties of GeO x thin films using 100 MeV Si ions

The Effects of Substrate Temperature on the Composition and IR Transmission Properties of Germanium Carbon Films Deposited by Reactive RF Magnetron Sputtering

Effect of Gamma Exposure on Chalcogenide Glass Films for Microphotonic Devices

Femtosecond Laser Deposition of Germanium Selenide onto Silicon Platform at Different Substrate Temperatures

Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Structure and optical properties of GeTe film controlled by amorphous to crystalline phase transition

Optical and microstructural studies of femtosecond laser treated amorphous germanium thin coatings

Microstructures and properties of Er-doped Al2O3 thin films synthesized by ion beam assisted deposition

Ion Implantation Damage Recovery in GeSn Thin Films

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Tuning the bandgap and photoluminescence properties of Ge/Al2O3 multilayer thin films using annealing and ion beam irradiation

The UV-induced positive and negative refractive index changes in GeO<sub>2</sub>-SiO<sub>2</sub> films

Preparation of Germanium Nitride Films by Low Pressure Chemical Vapor Deposition