Abstract:A great deal of interest is directed nowadays towards the development of innovative technologies in the field of quantum information and quantum computing, with emphasis on obtaining reliable qubits as building blocks. The realization of highly stable, controllable and accessible hole spin qubits is strongly dependent on the quality of the materials hosting them. Ultra-clean germanium/silicon-germanium heterostructures have been predicted and proven to be promising candidates and due to their large scalability potential, they are opening the door towards the development of realistic and reliable solid state, all-electric, silicon-based quantum computers. In order to obtain ultra-clean germanium/silicon-germanium heterostructures in a reverse grading approach, the understanding and control over the growth of Ge virtual substrates and thin films is key. Here, we present a detailed study on the growth kinetics, morphology, and crystal quality of Ge thin films grown via chemical vapor deposition by investigating the effects of growth temperature, partial pressure of the precursor gas and the use of Ar or H2 atmosphere. The presence of carrier gases catalyzes the deposition rate and induces a smoothening on the surfaces of films grown at low temperatures. We investigated the surface roughness and threading dislocation density as a function of deposition temperature, partial pressure and gas mixture. Ge thin films deposited by diluting GeH4 in Ar or H2 were employed as virtual substrates for the growth of full Ge/SiGe QW heterostructures. Their defect density was analyzed and their electric transport properties were characterized via Hall measurements. Similar results were obtained for both carrier gases used.

Preparation of Germanium Nitride Films by Low Pressure Chemical Vapor Deposition

Formation of Thin Germanium Dioxide Film with A High-Quality Interface Using A Direct Neutral Beam Oxidation Process

Nanocrystalline formation and optical properties of germanium thin films prepared by physical vapor deposition

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

ChemInform Abstract: Germanium Thin Film Formation by Low‐Pressure Chemical Vapor Deposition.

High-quality Germanium Dioxide Thin Films with Low Interface State Density Using a Direct Neutral Beam Oxidation Process

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Chemical Vapor Deposition of Ge on GaN/Al2O3(0001) Substrates

Selective CVD of germanium on silicon and its applications

Preparation of Hydrogenated Amorphous Germanium Nitrogen Alloys by Plasma Enhanced Chemical Vapor Deposition

Microstructure and Optical Properties of Ge Films Prepared by Ion Beam Assisted Deposition

Deposition of high-quality Ge film on Si by PECVD using GeCl4/H2 for fabricating near-infrared photodiodes

N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Hardness and optical gap enhancement of germanium carbon films by nitrogen incorporation

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures

Influence of Gas Pressure and RF Power on the Structural and Mechanical Properties of Germanium thin Films

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition