Abstract:Ultra-thin hydrogenated amorphous germanium films,with various thickness from 160 nm to 5 nm were grown by plasma enhanced chemical vapor deposition technique.The film structure was characterized by Raman spectroscopy,which exhibited a broad band centered around 280 cm-1 indicating their amorphous nature.The film thickness and optical properties were evaluated by ellipsometer spectroscopy.The measured thickness was well consistent with the pre-designed value and the optical band gap was about 1 eV which slightly increased with the decrease of film thickness.The temperature dependent conductivity of the films was measured.The electronic transport was believed to occur in the extended-states and the corresponding activation energy is about 0.3~0.4 eV.The light emission in infrared region from the films can be detected at low temperature.The sample for 160 nm had a broad luminescence band which can be divided into two sub-bands centered at 0.78 eV and 0.67 eV,respectively.By decreasing the films thickness less than 10 nm,the luminescence band beaome narrower and only a band at 0.8 eV was observed.It may be due to the relatively more hydrogen in the ultrathin films,which passivated the defect states and suppressed the defect-related luminescence.The non-radiative activation energy increased in ultrathin films suggesting the improved efficiency.

Preparation of Hydrogenated Amorphous Germanium Nitrogen Alloys by Plasma Enhanced Chemical Vapor Deposition

Study on structural stability of hydrogenated amorphous germanium-nitrogen alloys

Raman and Ft-Ir Study on Structure and Its Stability of Hydrogenated Amorphous Germanium-Nitrogen Alloys

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Effect of Hydrogen Plasma for Obtaining High Quality A-Sige:H Alloys

Role of Hydrogen Surface Coverage During Anodic Plasma Deposition of Hydrogenated Nanocrystalline Germanium

Structural Evolution During the Crystallization Process of Germanium Films Prepared by Plasma-Enhanced Chemical-Vapor-Deposition

Nitrogen Modification of Hydrogenated Amorphous Carbon Films

Structural and Photoelectronic Properties of A-Sige:H Thin Films with Varied Ge Prepared by PECVD

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Comparative Study of the Structural Properties of Nanocrystalline Ge:H Plasma Deposited Onto the Cathode and the Anode Using High Hydrogen Dilutions

Device-grade A-Sige:H Alloys Prepared by Nanometer Deposition/h2 Plasma Annealing Method

Study on the Preparation and Properties of Hydrogenated Amorphous Germanium Silicon Deposited in Argon Environment

New Crystalline-Structure for Nanometer-Sized Ge Microcrystallites Prepared by Plasma-Enhanced Chemical-Vapor-Deposition

Structure and photoelectric properties of hydrogenated amorphous silicon-germanium alloys produced by high hydrogen dilution method

Nitrogenated Amorphous Carbon As a Semiconductor

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

Structural, Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films

High-Quality A-Sige:H Produced by Nanometer Deposition and Hydrogen Plasma Annealing

Sige : H Thin Films Prepared By Plasma Assisted Reactive Thermal Chemical Vapor Deposition