Abstract:Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1.5 and 6 ml/min H2 flow-rate. It is shown by Elastic Recoil Detection Analysis (ERDA) that the hydrogen concentration increased by increasing H2 flow-rate. Annealing of the samples was carried out at 400 and 450 oC for several hours. It has been observed that samples prepared with 6 ml/min flow-rate at both annealing temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster than in non-hydrogenated samples. Samples prepared with 1.5 ml/min flow-rate have similar behaviour at 450 oC, but at 400 oC the decay of the first order SAXRD peaks was slower than in case of the non-hydrogenated multilayers. Qualitatively the observed behaviour can be explained by the fast desorption of the saturated hydrogen, leading to the formation of bubbles and craters at 450 oC, as well as, at 400oC in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing.

Raman and Ft-Ir Study on Structure and Its Stability of Hydrogenated Amorphous Germanium-Nitrogen Alloys

Study on structural stability of hydrogenated amorphous germanium-nitrogen alloys

Preparation of Hydrogenated Amorphous Germanium Nitrogen Alloys by Plasma Enhanced Chemical Vapor Deposition

Nitrogen Modification of Hydrogenated Amorphous Carbon Films

The Stability of Nitrogen-Containing Amorphous Carbon Films after Annealing at Moderate Temperatures

Structural and Photoelectronic Properties of A-Sige:H Thin Films with Varied Ge Prepared by PECVD

Raman study of structural order of a-SiNx:H and its change upon thermal annealing

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

Raman Scattering, Thermal studies and Reverse Monte Carlo Simulations of an Amorphous Ge$_{30}$Se$_{70}$ Alloy Produced by Mechanical Alloying

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Structural, Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films

Structure and photoelectric properties of hydrogenated amorphous silicon-germanium alloys produced by high hydrogen dilution method

Micro-Raman spectroscopy studies of as-deposited and furnace-annealed a-SiNx:H films

Effects of Amorphous and Nanocrystalline Structures on Hydrogen-Induced Optical Performance of Modulated Mg-Gd Films with Various Composition Fluctuations.

Effect of Hydrogen Plasma for Obtaining High Quality A-Sige:H Alloys

Chemical Bonding and Optical Properties of Germanium–carbon Alloy Films Prepared by Magnetron Co-Sputtering As a Function of Substrate Temperature

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Device-grade A-Sige:H Alloys Prepared by Nanometer Deposition/h2 Plasma Annealing Method

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization