Abstract:The effect of gas temperature (Tg) on surface morphology, surface roughness, photoelectrical performances of a-Si:H thin films deposited by PECVD at 250 degrees C substrate temperature has been investigated by. atomic force microscopy, spectrometric ellipsometry and semiconductor characterization system, respectively. It is found that the surface morphology and density (rho) as well as the photoelectrical properties such as refractive index (n), dark conductivity (sigma), temperature coefficient of resistance (TCR) and activation energy (E-a) remarkably depend on T-g of SiH4 fed in reaction chamber. The higher the T-g, the larger the clusters of a-Si:H thin films deposited. Also, refractive index of a-Si:H thin films increase as T-g rises and the relationship between T-g enhancement of n and the densification of the films is observed. It is indicated that (T varies by two orders of magnitude but TCR decreases by 1.6 %/degrees C, and E-a gradually decreases linearly from 289.0 to 138.1 meV with T-g varying from room temperature to 160 degrees C. The results of present study suggest that T-g in PECVD chamber plays an important role in the deposition of a-Si:H thin films and directly affects the surface morphology and photoelectrical properties of films. Control of surface morphology, photoelectrical properties of a-Si:H thin films through changing T-g can be usefully applied to the manufacturing of photoelectrical devices.

Structural and Photoelectronic Properties of A-Sige:H Thin Films with Varied Ge Prepared by PECVD

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Structure and Electronic States in A-Si:H Thin Films

Effect of gas temperature on the structural and optoelectronic properties of a-Si: H thin films deposited by PECVD

Structural Evolution and Electronic Properties of N-Type Doped Hydrogenated Amorphous Silicon Thin Films

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

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Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Characterization of Hydrogenated Amorphous Silicon Thin Films Prepared by Pecvd

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Structural and Optoelectronic Properties of A-Si:H: A New Analysis Based on Spectroscopic Ellipsometry

Manufacturing and Photoelectrical Properties of P-doped A-Si:H Thin Films Deposited by PECVD

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Study on the Preparation and Properties of Hydrogenated Amorphous Germanium Silicon Deposited in Argon Environment

Structure and photoelectric properties of hydrogenated amorphous silicon-germanium alloys produced by high hydrogen dilution method

Effect of Gas Pressure on the Optical Properties of n-Type a-Si: H Thin Films Deposited by PECVD

Structural, Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films

Structural Investigation And Barrier Properties Of A-C : H Thin Films On Polymer By Pecvd