Abstract:The effect of gas temperature (Tg) on surface morphology, surface roughness, photoelectrical performances of a-Si:H thin films deposited by PECVD at 250 degrees C substrate temperature has been investigated by. atomic force microscopy, spectrometric ellipsometry and semiconductor characterization system, respectively. It is found that the surface morphology and density (rho) as well as the photoelectrical properties such as refractive index (n), dark conductivity (sigma), temperature coefficient of resistance (TCR) and activation energy (E-a) remarkably depend on T-g of SiH4 fed in reaction chamber. The higher the T-g, the larger the clusters of a-Si:H thin films deposited. Also, refractive index of a-Si:H thin films increase as T-g rises and the relationship between T-g enhancement of n and the densification of the films is observed. It is indicated that (T varies by two orders of magnitude but TCR decreases by 1.6 %/degrees C, and E-a gradually decreases linearly from 289.0 to 138.1 meV with T-g varying from room temperature to 160 degrees C. The results of present study suggest that T-g in PECVD chamber plays an important role in the deposition of a-Si:H thin films and directly affects the surface morphology and photoelectrical properties of films. Control of surface morphology, photoelectrical properties of a-Si:H thin films through changing T-g can be usefully applied to the manufacturing of photoelectrical devices.

Manufacturing and Photoelectrical Properties of P-doped A-Si:H Thin Films Deposited by PECVD