Abstract:Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, <math> α</math> and <math> γ</math>) and one at high temperature (crystalline, <math> β</math>). Because transitions between the amorphous and crystalline states lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been investigated as a phase-change material for photonics, thermoelectrics, ferroelectrics, and spintronics. Consequently, the temperature-dependent phase transitions in GeTe have been studied for bulk and thin-film GeTe, both fabricated by sputtering. Colloidal synthesis of nanoparticles offers a more flexible fabrication approach for amorphous and crystalline GeTe. These nanoparticles are known to exhibit size-dependent properties, such as an increased crystallization temperature for the amorphous-to-<math> α</math> transition in sub-10 nm GeTe particles. The <math> α</math>-to-<math> β</math> phase transition is also expected to vary with size, but this effect has not yet been investigated for GeTe. Here, we report time-resolved x-ray diffraction of GeTe nanoparticles with different diameters and from different synthetic protocols. We observe a non-volatile amorphous-to-<math> α</math> transition between 210 <math> °</math>C and 240 <math> °</math>C and a volatile <math> α</math>-to-<math> β</math> transition between 370 <math> °</math>C and 420 <math> °</math>C. The latter transition was reversible and repeatable. While the transition temperatures are shifted relative to the values known for bulk GeTe, the nanoparticle-based samples still exhibit the same structural phases reported for sputtered GeTe. Thus, colloidal GeTe maintains the same general phase behavior as bulk GeTe while allowing for more flexible and accessible fabrication. Therefore, nanoparticle-based GeTe films show great potential for applications such as in active photonics.

Structure and optical properties of GeTe film controlled by amorphous to crystalline phase transition

Structural and optical properties of Ge60Te40: experimental and theoretical verification

Evolution of crystal structures in GeTe during phase transition

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Structural and Electrical Properties of Laser-Crystallized Nanocrystalline Ge Films and Nanocrystalline Ge/SiN X Multilayers

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Preparation And Short-Wavelength Optical Storage Properties Of Ge-Te Alloy Phase Change Thin Film

Anisotropic Thermoelectric Properties of GeTe Single Crystal

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study

Optimization of electrical properties and radio frequency applications of GeTe thin film

Phase transitions in germanium telluride nanoparticle phase-change materials studied by temperature-resolved x-ray diffraction

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Optical properties and electronic structure of amorphous Ge and Si

Broadband and ultrafast terahertz modulation with GeTe thin films

Determination of Optical Parameters of GeTe Semiconductor Films Annealed at Different Temperatures

Optical Nonlinear Absorption Characteristics Of Crystalline Ge2sb2te5 Thin Films

A Study of the Crystallization Kinetics of Ge-Te Amorphous Systems

Determination of optical parameters of GeTe semiconductor films after thermal treatment

In situ transmission electron microscopy observations of the crystallization of amorphous Ge films