Optical Nonlinear Absorption Characteristics Of Crystalline Ge2sb2te5 Thin Films

Shuang Liu,Jingsong Wei,Fuxi Gan,

DOI: https://doi.org/10.1063/1.3614501

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:In this work, the optical nonlinear absorption characteristics of the crystalline Ge2Sb2Te5 thin films were investigated by performing z-scan measurements with nanosecond laser pulse. The experimental results showed that the nonlinear saturable absorption coefficient was as large as -10(-2) m/W for the excitation intensity lower than 0.17 GW/m(2). The nonlinear saturable absorption changed to the nonlinear reverse-saturable absorption with a coefficient of about | 10(-2) at the excitation intensity of above 0.17 GW/m(2). To explore the internal mechanisms, the first-principle theory was employed to calculate the electronic structure, and a five-level structure suitable for explanation of nonlinear absorption reversal was suggested. The theoretical calculation and analysis indicated that for the excitation intensity smaller than 0.17 GW/m(2), the contribution to the nonlinear saturable absorption is mainly from band-filling effect; for the excitation intensity larger than 0.17 GW/m(2), the nonlinear reverse saturable absorption results from the thermal-induced nonlinearity, which is further confirmed by picosecond laser pulse z-scan measurement and the variable-temperature spectroscopy ellipsometric analysis. (C) 2011 American Institute of Physics. [doi:10.1063/1.3614501]