Effects of Sputtering Parameter on Optical Constants of Ge2Sb2Te5 Thin Films
XIE Quan,HOU Lisong,GAN Fuxi,RUAN Hao,LI Jing,LI Jinyan
DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.02.016
2001-01-01
Chinese Journal of Semiconductors
Abstract:The effects of sputtering parameter on the optical constants(n,k)of Ge2Sb2Te5 thin films in the wavelength range of 300—830nm were studied.The results show:(1)When the sputtering power is constant,the refractive index(n) first increases and then decreases with the increasing of Ar gas pressure,whereas the extinction coefficient(k) changes with Ar gas pressure in a contrary way to that of n.(2)When the sputtering Ar gas pressure is constant,for the amorphous thin films,in the wavelength range of 300—500nm,the refractive index first increases and then decreases with the increasing power,whereas the extinction coefficient decreases monotonically.In the wavelength range of 500—830nm,the refractive index decreases with the sputtering power,while the extinction coefficient first decreases and then increases.For the crystalline thin films,in the wavelength range of 300—830nm,the refractive index first decreases and then increases,whereas the extinction coefficient decreases.(3)The extent of the influence of sputtering parameter on n and k also changes with the wavelength,which is greater in the long wavelength region than that in the short wavelength region.The mechanism by which the optical constants of the Ge2Sb2Te5 thin films are affected by sputtering parameter has been discussed based on the variation of the density and microstructure of the films.