Abstract:We systematically investigated the growth of Si-doped $\beta$-Ga$_2$O$_3$ films using LPCVD system, achieving high electron mobilities of 162 cm$^2$/V.s and 149 cm$^2$/V.s at carrier concentrations of $1.51 \times 10^{17}$ cm$^{-3}$ and $1.15 \times 10^{17}$ cm$^{-3}$, respectively, for homoepitaxial (010) $\beta$-Ga$_2$O$_3$ films grown on $\beta$-Ga$_2$O$_3$ substrates and heteroepitaxial (-201) $\beta$-Ga$_2$O$_3$ films grown on off-axis c-sapphire substrates with 6° miscut, representing the highest mobilities reported for LPCVD-grown $\beta$-Ga$_2$O$_3$ materials. Carrier concentrations were precisely tuned by varying SiCl$_4$ flow rates at a growth temperature of 1000°C, resulting in concentrations ranging from $1.15 \times 10^{17}$ to $1.19 \times 10^{19}$ cm$^{-3}$, as confirmed by both Hall and C-V measurements. The films exhibited high crystalline quality, confirmed by high-resolution XRD and Raman spectroscopy, indicating phase purity and structural integrity. Surface morphologies characterized by FESEM and AFM imaging showed a strong correlation between carrier concentrations and surface smoothness, with lower concentrations resulting in reduced RMS roughness. SIMS analysis revealed uniform Si incorporation, with low carbon, hydrogen, and chlorine impurities below detection limits, indicating high purity of the films. A high low-temperature peak mobility exceeding 843 cm$^2$/V$\cdot$s was achieved for (-201) $\beta$-Ga$_2$O$_3$ films at 80 K, highlighting the high purity and low compensation of these films. These findings emphasize the potential of LPCVD growth system for producing high-purity $\beta$-Ga$_2$O$_3$ films with thickness ranging between ~2.3-11.7 $\mu$m and faster growth rates (~4.7-17 $\mu$m/hr), promising transport properties, controllable doping, and scalability for developing high power vertical devices.

Growth and Characterization of Si-doped Β-Ga2o3 Films by Pulsed Laser Deposition

Pulsed Laser Deposition 1

Growth and Characterization of Gd2O3 Thin Film on Si

LPCVD Grown Si-Doped $β$-Ga$_2$O$_3$ Films with Promising Electron Mobilities

Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

Growth and characterization of Si-doped Ga2O3 thin films by remote plasma atomic layer deposition: Toward UVC-LED application

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition

Growth of Cubic MgxZn1-xO Films and Characterization

Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates

Growth and characterization of Ta-doped Ga2O3 films deposited by magnetron sputtering

Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy

Growth and Characterization of c-Orient LiNbO3 Films on Si(100) by Pulse Laser Deposition

Growth of SiO2 films by ECR-PECVD for planar optical waveguide and its properties

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Growth of Zn1-xMgxO Films by Pulsed Laser Deposition

Pulsed Laser Deposition of /mgo Bilayered Films on Si Wafer in Waveguide Form

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates