Abstract:Due to the large thermal and lattice mismatch between gallium oxide (Ga2O3) and diamond, the resulting residual stress brings high defect densities and susceptibility to cracking on the Ga2O3 epilayer. To balance the stress-strain behavior and eliminate the dislocation defects, this study employed diamond composite substrates which consist of a pre-grown AlN strain interlayer on the surface of the bulk diamond to heteroepitaxy Ga2O3 nanomembranes via pulsed laser deposition (PLD). To achieve an optimal solution of high-quality Ga2O3 thin films, several comparative investigations were proposed and gave a preliminary exploration. Subsequently, spectroscopic ellipsometry (SE), high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS), were performed to characterize the physical, chemical, and optical properties. A comprehensive analysis was conducted on the quality of Ga2O3 thin films dependent on the growth processes including oxygen pressure, in-situ annealing treatment, and the “two-step” growth. It demonstrated that high oxygen pressure significantly increased the growth rate of Ga2O3 (∼ 2 times), slightly improved crystallinity and surface morphology (RMS decreased ∼ 2.2 nm), and reduced oxygen vacancy defects (∼ 3%). The additional in-situ annealing process and the “two-step” growth method also brought a bit of thickness increase (∼ 28 nm and ∼ 14 nm, respectively). By in-situ annealing in various stages, 2D and 3D growth modes competition caused Ga2O3 thin films' continuous grain growth and fewer oxygen vacancy defects but presented different variations of surface morphology. On the whole, the “two-step” growth enhancement scheme proves the largest effect on Ga2O3's quality among the designed sets of experiments. Exploring various optimization schemes and proposing a highly reliable growth technology route is of great significance to give impetus to Ga2O3 application in the electric power field. Consequently, for further insight, continuous work will be propelled in the future.

Pulsed Laser Deposition 1

Growth and Characterization of Si-doped Β-Ga2o3 Films by Pulsed Laser Deposition

Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Growth and Characterization of Homoepitaxial $β$-Ga$_2$O$_3$ Layers

Optimization of Heteroepitaxial Gallium Oxide Thin Films on Diamond Composite Substrates using Pulsed Laser Deposition Method

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

Growth of Zn1-xMgxO Films by Pulsed Laser Deposition

Low-temperature deposition of β-Ga 2 O 3 thin films employing in situ pulsed laser-assisted RF sputtering system

Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition

Realization and optimization of enhanced and spectral selective photoluminescence in size and phase controlled nanocrystalline Ga2O3 films made by pulsed laser deposition

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Growth Dependencies of Epitaxial Oxide Thin Films Prepared by Pulsed Laser Deposition

Homoepitaxial growth of SrTiO$_3$ by Pulsed Laser Deposition: energetic vs thermal growth

Heteroepitaxial growth of Ga2O3 thin films on Al2O3(0001) by ion beam sputter deposition

Epitaxial growth of a β-Ga2O3 (−201)-oriented thin film on a threefold symmetrical SrTiO3 (111) substrate for heterogeneous integration

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Non-equilibrium epitaxy of metastable polymorphs of ultrawide-bandgap gallium oxide

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

Enhancing the quality of homoepitaxial ( − 201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium