Abstract:Oxide films of the quality required for the fabrication of electronic and photonic devices are typically deposited at elevated temperatures and thermal equilibrium, thereby adversely impacting thermal budgets. We report the deposition and patterning of silicon dioxide (SiO2) films of high electrical and optical quality on Si(100) or polymer substrates in a N2 atmosphere and at 300 K by the photochemical conversion of thin liquid tetraethoxysilane (TEOS) layers with narrowband vacuum ultraviolet radiation [vacuum ultraviolet (VUV), 172 nm] provided by efficient microplasma lamps. Irradiating liquid TEOS layers, produced by spin-coating the precursor onto a substrate, with a VUV intensity of 13 mW cm−2, yields 40 nm-thick SiO2 films having a dielectric breakdown strength (Eb) of 5 MV cm−1, for which no precedent exists in the deposition of oxide films at 300 K. If room temperature-deposited films are post-annealed at 200 °C, Eb rises to 7.5 MV cm−1, which is <12% below the measured value (8.5 MV cm−1) for 40 nm SiO2 films grown by thermal oxidation. The deposition of 1 μm thick, stoichiometric SiO2 films requires only 20 min of VUV illumination at low optical fluences, and films with thicknesses of ∼35–60 nm exhibit a refractive index of 1.45 (633 nm). X-ray photoelectron spectrometry and Rutherford backscattering analysis indicate that, despite the deposition temperature, hydrocarbon impurity levels are near or below the detection limit. The capability for depositing 960 nm-thick SiO2 films uniformly (to within 0.6%) by liquid → solid photochemical conversion over a 5 cm diameter Si substrate and patterning films onto flexible polymer substrates has also been demonstrated.

Growth of SiO2 films by ECR-PECVD for planar optical waveguide and its properties

Planar optical waveguide thin films grown by microwave ECR PECVD

Study of SiO2 Films Prepared by Electron Cyclotron Resonant Microwave Plasma

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

SEM Research of SiO2 Thin Film on Inner Wall of Glass Container by PECVD

PECVD Deposition and Characterization of Thick Silica Film for Optical Waveguide

Growth of photoluminescent nanometer Si-SiOx films by reactive evaporation

Cubic Phase MgxZn1−xO Thin Films for Optical Waveguides

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

Effect of growth rate on the characteristics of LiNbO3 waveguide thin films on SiO2/Si substrate by PLD

Growth of Cubic MgxZn1-xO Films and Characterization

Low-plasma and high-temperature PECVD grown silicon-rich SiO(x) film with enhanced carrier tunneling and light emission

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

THE OES IN DEPOSITING MICROCRYSTALLINE SILICON MATERIAL BY RF-PECVD

Laser Annealing of SiO2 Film Deposited by ICPECVD for Fabrication of Silicon Based Low Loss Waveguide

Effect of growth rate on the characteristics of LiNbO_3 waveguide thin films on SiO_2/Si substrate by PLD

Optimization of Fabrication Process for SiON/SiOx Films Applicable as Optical Waveguides

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K