Abstract:High‐quality epitaxial β‐(AlxGa1‐x)2O3 films are grown by RF magnetic sputtering. The Al content in β‐(AlxGa1‐x)2O3 can tune the energy bandgap increased up to 6.10 eV. The Ga d states of DOS calculated by DFT are redistributed along valence to conduction bands by abundant introduced Al p states. These results provide potential application of β‐(AlxGa1‐x)2O3 in photonic devices. Bandgap engineering in monoclinic gallium oxide (β‐Ga2O3) is a powerful strategy for designing semiconductor optoelectronic devices with specific functionalities. In this work, aluminum doping is utilized to modulate the bandgap of Ga2O3. By growing epitaxial β‐(AlxGa1‐x)2O3 (0≤ x≤ 0.84) films on c‐plane sapphire substrates using RF magnetron sputtering, it allowed to tune the energy bandgap, achieving values as high as 6.10 eV. The increased luminescence intensity is attributed to the recombination between donor and acceptor transitions induced by Al doping, resulting in more defects. Additionally, the luminescent band experienced blueshifts due to the enhanced bandgaps. Moreover, density of functional theory (DFT) simulations confirmed the sensitivity of the bandgap to Al content, distinguishing between Ga‐dominated (x 0.5) β‐(AlxGa1‐x)2O3. Notably, the bandgap increased more rapidly in Ga‐dominated structures compared to Al‐dominated ones. The electronic structure analysis revealed a redistribution of Ga d states from valence to conduction bands, attributed to the introduction of numerous Al p states. These combined experimental and detailed electronic structure investigations proved crucial insights for designing the structure and exploring potential applications of β‐(AlxGa1‐x)2O3 in photonic devices.

Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method

Characteristics of 4-Inch (100) Oriented Mg-doped Β-Ga2o3 Bulk Single Crystals Grown by a Casting Method

Optical properties of pure and Sn-doped β-Ga 2 O 3 single crystals grown by optical float zone technique

Polarization and orientation dependent optical properties in Czochralski-grown transition metal doped β-Ga2O3

Structural and photoluminescence properties of Co-Sputtered p-type Zn-doped β-Ga2O3 thin films on sapphire substrates

Ultraviolet photoluminescence of β-Ga2O3 microparticles synthesized by hydrothermal method

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG

The Photoluminescence Properties of β-Ga2O3 Thin Films

Realization and optimization of enhanced and spectral selective photoluminescence in size and phase controlled nanocrystalline Ga2O3 films made by pulsed laser deposition

Microstructure, Optical, and Photoluminescence Properties of Β-Ga2o3 Films Prepared by Pulsed Laser Deposition under Different Oxygen Partial Pressures*

Photoluminescence spectroscopy of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3

Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices

Microstructure, Optical and Photoluminescence Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition

Luminescence Properties of Β-Ga2o3:Bi Single Crystals Growth by the Optical Floating Zone Method

Identifying orientation-dependent optical properties of single-crystalline β-Ga2O3 films

Tungsten donors doping in β-gallium oxide single crystal

Study on the Growth of Pure and Ga3+ Doped γ-LiAlO2 Crystals

Modulation of Luminescence Emission Spectra of N-doped SS-Ga2o3 Nanowires by Thermal Evaporation

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Enhanced scintillation performance of Cu-doped β-Ga 2 O 3 single crystals grown by floating-zone method