Abstract:GaSxSe1−x solid solutions are layered semiconductors with a band gap between 2.0 and 2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with weak polarization bonds between them, which allows obtaining, by splitting, plan-parallel lamellae with atomically smooth surfaces. By heat treatment in a normal or water vapor-enriched atmosphere, their plates are covered with a layer consisting of β–Ga2O3 nanowires/nanoribbons. In this work, the elemental and chemical composition, surface morphology, as well as optical, photoluminescent, and photoelectric properties of β–Ga2O3 layer formed on GaSxSe1−x (0 ≤ x ≤ 1) solid solutions (as substrate) are studied. The correlation is made between the composition (x) of the primary material, technological preparation conditions of the oxide-semiconducting layer, and the optical, photoelectric, and photoluminescent properties of β–Ga2O3 (nanosized layers)/GaSxSe1−x structures. From the analysis of the fundamental absorption edge, photoluminescence, and photoconductivity, the character of the optical transitions and the optical band gap in the range of 4.5–4.8 eV were determined, as well as the mechanisms behind blue-green photoluminescence and photoconductivity in the fundamental absorption band region. The photoluminescence bands in the blue-green region are characteristic of β–Ga2O3 nanowires/nanolamellae structures. The photoconductivity of β–Ga2O3 structures on GaSxSe1−x solid solution substrate is determined by their strong fundamental absorption. As synthesized structures hold promise for potential applications in UV receivers, UV-C sources, gas sensors, as well as photocatalytic decomposition of water and organic pollutants.

Ultraviolet photoluminescence of β-Ga2O3 microparticles synthesized by hydrothermal method

β-Ga2O3 Nanostructures: Chemical Vapor Deposition Growth Using Thermally Dewetted Au Nanoparticles as Catalyst and Characterization

A Simple Method to Synthesize Β-Ga2o3 Nanorods and Their Photoluminescence Properties

Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method

Microstructure, Optical, and Photoluminescence Properties of Β-Ga2o3 Films Prepared by Pulsed Laser Deposition under Different Oxygen Partial Pressures*

The Photoluminescence Properties of β-Ga2O3 Thin Films

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Preparation, Chemical Composition, and Optical Properties of (β–Ga2O3 Composite Thin Films)/(GaSxSe1−x Lamellar Solid Solutions) Nanostructures

Structural, optical and photoluminescence properties of Ga2O3 thin films deposited by vacuum thermal evaporation

Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band

Luminescence Properties of Β-Ga2o3:Bi Single Crystals Growth by the Optical Floating Zone Method

A simple method to synthesize gallium oxide nanosheets and nanobelts

Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β−Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Fabrication and UV-sensing properties of one-dimensional β-Ga 2O3 nanomaterials

Photoluminescence spectroscopy of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3

Kinetics of charge carrier recombination in beta-Ga2O3 crystals

Deep Ultraviolet Optical Anisotropy of β-Gallium Oxide Thin Films

Optical properties of pure and Sn-doped β-Ga 2 O 3 single crystals grown by optical float zone technique

Temperature dependence of optical centers in 200 keV electron irradiated β-Ga2O3

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

High-performance -Ga<sub>2</sub>O<sub>3</sub> thickness dependent solar blind photodetector