Abstract:Heteroepitaxy of beta-phase gallium oxide (beta-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ((2) over bar 01)-oriented beta-Ga2O3 heteroepitaxial thin films were investigated. Unintentionally doped beta-Ga2O3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0 degrees and 6 degrees toward (11 (2) over bar0) via metal-organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the beta-Ga2O3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the beta-Ga2O3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick beta-Ga2O3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye-Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of beta-Ga2O3 films on 6 degrees offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the beta-Ga2O3 films grown on 6 degrees offcut sapphire exhibit a lower thermal boundary conductance at the beta-Ga2O3/ sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ((2) over bar 01)-oriented beta-(AlxGal)(2)O-3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the beta-(AlxGa1-x)(2)O-3 films exhibit lower thermal conductivities (2.8-4.7 W/m.K) than the beta-Ga2O3 thin films. The dominance of the alloy disorder scattering in beta-(AlxGa1-x)(2)O-3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown beta-phase Ga2O3 and (AlxGa1-x)(2)O-3 thin films and lays the groundwork for the thermal modeling and design of beta-Ga2O3 electronic and optoelectronic devices.

Deep Ultraviolet Optical Anisotropy of β-Gallium Oxide Thin Films

Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band

Anisotropic optical and electric properties of β-gallium oxide

Anisotropy of optical transitions in β - Ga2O3 investigated by polarized photoluminescence excitation spectroscopy

Identifying orientation-dependent optical properties of single-crystalline β-Ga2O3 films

Highly Polarization-Deep-Ultraviolet-Sensitive β-Ga 2 O 3 Epitaxial Films by Disrupting Rotational Symmetry and Encrypted Solar-Blind Optical Communication Application

Free Carrier-Induced Optical Nonlinearities in Β-Ga2o3 Single Crystals at 355 Nm

Intra- and Inter-Conduction Band Optical Absorption Processes in $β$-Ga$_2$O$_3$

High-performance -Ga<sub>2</sub>O<sub>3</sub> thickness dependent solar blind photodetector

MOCVD-grown Ga2O3 thin films for polarization-sensitive infrared photonics

Structural, Thermal, and Electronic Properties of Two-Dimensional Gallium Oxide (β-Ga2 O3 ) from First-Principles Design

Characterizations of the Nonlinear Optical Properties for (010) and (-201) Beta-phase Gallium Oxide

Single-Crystalline All-Oxide α–γ–β Heterostructures for Deep-Ultraviolet Photodetection

Deep-level Defects in Gallium Oxide

Polarization and orientation dependent optical properties in Czochralski-grown transition metal doped β-Ga2O3

Optical activity and phase transformations in γ/β Ga2O3 bilayers under annealing

Beta-Gallium Oxide Material and Device Technologies

Review of polymorphous Ga<sub>2</sub>O<sub>3</sub> materials and their solar-blind photodetector applications

Thermal Conductivity Of Beta-Phase Ga2o3 And (Ai(X)Ga(1-X))(2)O-3 Heteroepitaxial Thin Films

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Ellipsometric Determination of Anisotropic Optical Constants of Single Phase Ga2O3 Thin Films in Its Orthorhombic and Monoclinic Phases