Single-Crystalline All-Oxide α–γ–β Heterostructures for Deep-Ultraviolet Photodetection

Kuang-Hui Li,Chun Hong Kang,Jung-Hong Min,Nasir Alfaraj,Jian-Wei Liang,Laurentiu Braic,Zaibing Guo,Mohamed Nejib Hedhili,Tien Khee Ng,Boon S. Ooi

DOI: https://doi.org/10.1021/acsami.0c15398

2020-11-17

Abstract:Recent advancements in gallium oxide (Ga₂O₃)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline Ga₂O₃ layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline β-Ga₂O₃ layer grown on an α-Al₂O₃ substrate through an interfacial γ-In₂O₃ layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-In₂O₃ provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms. Physical characterization based on X-ray diffraction and high-resolution transmission electron microscopy imaging confirms the single-crystalline nature of the grown films and the crystallographic orientation relationships among the monoclinic β-Ga₂O₃, cubic γ-In₂O₃, and trigonal α-Al₂O₃, while the elemental composition and sharp interfaces across the heterostructure are confirmed by Rutherford backscattering spectrometry. Furthermore, the energy-band offsets are determined by X-ray photoelectron spectroscopy at the β-Ga₂O₃/γ-In₂O₃ interface, elucidating a type-II heterojunction with conduction- and valence-band offsets of 0.16 and 1.38 eV, respectively. Based on the single-crystalline β-Ga₂O₃/γ-In₂O₃/α-Al₂O₃ all-oxide heterostructure, a vertically oriented DUV photodetector is fabricated that exhibits a high photoresponsivity of 94.3 A/W, an external quantum efficiency of 4.6 × 10⁴%, and a specific detectivity of 3.09 × 10¹² Jones at 250 nm. The present demonstration lays a strong foundation for and paves the way to future all-oxide-based transparent photonic platforms.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a new type of single - crystal all - oxide heterostructure (i.e., β - Ga₂O₃/γ - In₂O₃/α - Al₂O₃) for the application of deep - ultraviolet (DUV) photodetectors. Specifically, the paper focuses on:

1. **Single - crystal growth technology**: By means of pulsed - laser deposition (PLD) technology, single - crystal γ - In₂O₃ and β - Ga₂O₃ layers are successively grown on a sapphire substrate to form a high - quality single - crystal heterostructure. This step is crucial for ensuring high carrier mobility, low Schottky barrier, and high transparency in the visible - light band.

2. **Optimization of material properties**: The role of γ - In₂O₃ as an intermediate conductive layer has been studied. It not only provides high carrier transport ability but also has antioxidant properties, which is very important for realizing a vertical - structure transparent - oxide photon platform.

3. **Band - offset analysis**: The band - offset at the β - Ga₂O₃/γ - In₂O₃ interface has been analyzed by X - ray photoelectron spectroscopy (XPS), and the conduction - band offset (CBO) has been determined to be 0.16 eV and the valence - band offset (VBO) to be 1.38 eV, forming a type - II heterojunction.

4. **Device - performance evaluation**: Based on the single - crystal β - Ga₂O₃/γ - In₂O₃/α - Al₂O₃ heterostructure, a vertical - structure DUV photodetector has been fabricated, and its photoelectric properties have been characterized, including photoresponsivity, external quantum efficiency (EQE), specific detectivity (D*), and time - response characteristics. The results show that the photoresponsivity of this photodetector at 250 nm is 94.3 A/W, the external quantum efficiency is 4.6 × 10⁴%, and the specific detectivity is 3.09 × 10¹² Jones.

In conclusion, this paper aims to lay the foundation for the future application of transparent - oxide photon platforms by developing high - quality single - crystal all - oxide heterostructures, especially for the application in the field of deep - ultraviolet light detection.