Abstract:Heteroepitaxy of beta-phase gallium oxide (beta-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ((2) over bar 01)-oriented beta-Ga2O3 heteroepitaxial thin films were investigated. Unintentionally doped beta-Ga2O3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0 degrees and 6 degrees toward (11 (2) over bar0) via metal-organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the beta-Ga2O3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the beta-Ga2O3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick beta-Ga2O3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye-Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of beta-Ga2O3 films on 6 degrees offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the beta-Ga2O3 films grown on 6 degrees offcut sapphire exhibit a lower thermal boundary conductance at the beta-Ga2O3/ sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ((2) over bar 01)-oriented beta-(AlxGal)(2)O-3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the beta-(AlxGa1-x)(2)O-3 films exhibit lower thermal conductivities (2.8-4.7 W/m.K) than the beta-Ga2O3 thin films. The dominance of the alloy disorder scattering in beta-(AlxGa1-x)(2)O-3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown beta-phase Ga2O3 and (AlxGa1-x)(2)O-3 thin films and lays the groundwork for the thermal modeling and design of beta-Ga2O3 electronic and optoelectronic devices.

Characterizations of the Nonlinear Optical Properties for (010) and (-201) Beta-phase Gallium Oxide

Free Carrier-Induced Optical Nonlinearities in Β-Ga2o3 Single Crystals at 355 Nm

Anisotropy of optical transitions in β - Ga2O3 investigated by polarized photoluminescence excitation spectroscopy

Gallium oxide-based optical nonlinear effects and photonics devices

Anisotropic optical and electric properties of β-gallium oxide

Fabrication and Characterization of Β-Ga2o3 Optical Nanowires

Ellipsometric Determination of Anisotropic Optical Constants of Single Phase Ga2O3 Thin Films in Its Orthorhombic and Monoclinic Phases

Deep Ultraviolet Optical Anisotropy of β-Gallium Oxide Thin Films

Nonlinear Optical Properties of Integrated GeSbS Chalcogenide Waveguides

Dispersion of two-photon absorption and nonlinear refraction in β -Ga2O3 from 350 to 515 nm

Ultrafast Dynamics of Optical Nonlinearities in Β-Ga2o3

Optical activity and phase transformations in γ/β Ga2O3 bilayers under annealing

Integrated Gallium Nitride Nonlinear Photonics

Gallium-doped Zinc Oxide: Nonlinear Reflection and Transmission Measurements and Modeling in the ENZ Region

Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Characterization of Optical Properties and Thermo-Optic Effect for Non-Polar AlGaN Thin Films Using Spectroscopic Ellipsometry

Optical Nonlinearities and Ultrafast All-Optical Switching of M-Plane Gan in the Near-Infrared

Anisotropic Anharmonicity Dictates the Thermal Conductivity of Gallium Oxide ($β-Ga_2O_3$)

Thermal Conductivity Of Beta-Phase Ga2o3 And (Ai(X)Ga(1-X))(2)O-3 Heteroepitaxial Thin Films

Investigation of Optical Nonlinear Properties in Semiconductor Gan