Abstract:Nominally phase-pure $\gamma$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C exhibited either poor crystallization or an amorphous structure; the film grown at 500 $^{\circ}$C contained both $\beta$-$Ga_2O_3$ and $\gamma$-$Ga_2O_3$. A nominally phase-pure $\beta$-$Ga_2O_3$ film was obtained at 530 $^{\circ}$C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the $\gamma$-$Ga_2O_3$ film grown at 470 $^{\circ}$C revealed a high density of antiphase boundaries. A planar defect model developed for $\gamma$-$Al_2O_3$ was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of $\gamma$-$Ga_2O_3$. The presence of the 180$^{\circ}$ rotational domains and 90$^{\circ}$ rotational domains of $\beta$-$Ga_2O_3$ inclusions within the $\gamma$-$Ga_2O_3$ matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 $^{\circ}$C and the same film annealed at 600 $^{\circ}$C. The results led to the hypotheses that (i) incorporation of certain dopants including Si, Ge, Sn, Mg, Al, and Sc, into $\beta$-$Ga_2O_3$, locally stabilizes the "$\gamma$-phase" and (ii) the site preference(s) for these dopants promotes the formation of the "$\gamma$-phase" and/or $\gamma$-$Ga_2O_3$ solid solutions. However, in the absence of such dopants, pure $\gamma$-$Ga_2O_3$ remains the least stable $Ga_2O_3$ polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other $Ga_2O_3$ polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between $\gamma$-$Ga_2O_3$ and $\beta$-$Ga_2O_3$ than all other polymorphs.

Optical activity and phase transformations in γ/β Ga2O3 bilayers under annealing

Thermal stability and phase transformation of $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ thin films to $β$-Ga$_2$O$_3$ under various ambient conditions

Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3

Thermal Conductivity of Double Polymorph Ga2O3 Structures

Ion-Beam Modification of Metastable Gallium Oxide Polymorphs

Diffusion-driven and size-dependent phase changes of gallium oxide nanocrystals in a glassy host

Atomic scale mechanism of β to γ phase transformation in gallium oxide

Interplay of the disorder and strain in gallium oxide

Anisotropy of optical transitions in β - Ga2O3 investigated by polarized photoluminescence excitation spectroscopy

Native amorphous nanoheterogeneity in gallium germanosilicates as a tool for driving Ga2O3 nanocrystal formation in glass for optical devices

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in $α$-Ga$_{2}$O$_{3}$

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Structural, optical and photoluminescence properties of Ga2O3 thin films deposited by vacuum thermal evaporation

Evolution of Optical Properties and Band Structure from Amorphous to Crystalline Ga2O3 Films

Atomic-scale investigation of $γ$-Ga$_2$O$_3$ deposited on MgAl$_2$O$_4$ and its relationship with $β$-Ga$_2$O$_3$

Disorder-induced ordering in gallium oxide polymorphs

Identifying orientation-dependent optical properties of single-crystalline β-Ga2O3 films

Polarization and orientation dependent optical properties in Czochralski-grown transition metal doped β-Ga2O3

Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

Optical and optoelectronic properties of gallium oxide films fabricated by the chemical vapour deposition method