Abstract:Due to the unique anisotropic chemical and physical properties, two-dimensional (2D) layered materials, such as IV-VI monochalcogenides with puckered honeycomb structure, have received considerable interest recently. Among the IV-VI layered MX (M = Ge, Sn; X = Se, S) compounds, germanium sulfide (GeS) stands out for its strongest anisotropic thermal conductivities and figure-of-merit values. Additionally, the layer-independent direct energy bands (Eg ∼1.6 eV, E1 ∼2.1 eV) of GeS flake provide excellent insights into further applications as visible photodetectors. Herein, the polarization-tunable nonlinear absorption (NA) patterns of GeS flake have been systematically investigated. Specifically, both the polarization-dependent Raman spectroscopy and the linear absorption (LA) spectroscopy were employed to characterize the lattice orientation and absorption edges of the 251-nm GeS flake. Considering the low damage threshold of GeS flake, the GeS/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of GeS. Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption (SA) effect along armchair and reverse-saturated-absorption (RSA) effect along zigzag in the GeS/graphene heterostructure. Moreover, the function of the polarization-based GeS/graphene heterostructure all-optical switch was experimentally verified. Notably, thanks to the polarization-dependent NA patterns (SA/RSA) of GeS, the "ON" and "OFF" states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser (532 nm, 80 nW), whose state can be controlled by the polarization of femtosecond switching laser (600 nm, 35 fs, 500 Hz, 12 GW cm−2). The ON/OFF ratio can achieve up to 17% by changing polarization, compared with the ratios of 3.0% by increasing the incident power of switching light in our experiment. The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devices based on GeS/graphene heterostructure.

Optical Nonlinearities and Ultrafast All-Optical Switching of M-Plane Gan in the Near-Infrared

Investigation of Optical Nonlinear Properties in Semiconductor Gan

Dynamics of Optical Nonlinearities in Gan

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

Three-photon Absorption and Kerr Nonlinearity in Pristine and Doped Β-Ga2o3 Single Crystals

Ultrafast Dynamics of Optical Nonlinearities in Β-Ga2o3

Broadband nonlinear refraction transients in C-doped GaN based on absorption spectroscopy

Broad-Band Ultrafast All-Optical Switching Based on Enhanced Nonlinear Absorption in Corrugated Indium Tin Oxide Films

Anisotropy Of Two-Photon Absorption And Free-Carrier Effect In Nonpolar Gan

2D GeP as a Novel Broadband Nonlinear Optical Material for Ultrafast Photonics

Recent Progress on Acentric La3Nb0.5Ga5.5O14 Crystals: Large-Size Growth and Application to Ultrafast Mid-Infrared Laser Systems [Invited]

Decadal bandwidth phase matching for frequency resolved optical gating from the near to the long wavelength infrared

Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb 2 GeTe 4 with Asymmetric Architecture for Ultrafast Photonics

Optical Nonlinearities and Carrier Dynamics in Fe Doped GaN Single Crystal

Ultrafast Nonlinearity and Broadband Photodynamics in Fe-Doped GaN Crystals

Enhancing The Optical Nonlinearity By 1-D Thin-Film Photonic Crystals With Kerr Defect Cavities

Investigation on nonlinear optical properties of ZrGeTe4 nanosheets and its application in ultrafast photonic

All-optical ultrafast polarization switching with nonlinear plasmonic metasurfaces

Free Carrier-Induced Optical Nonlinearities in Β-Ga2o3 Single Crystals at 355 Nm

Efficient Optical Kerr Gating Property of Fluorotellurite Glass

Ultra-broadband Optical Switching Plasmons Waveguide in Ge Nanowires