MOCVD-grown Ga2O3 thin films for polarization-sensitive infrared photonics

Sina Abedini Dereshgi,Junhee Lee,Daniele Ceneda,Maria Cristina Larciprete,Marco Centini,Manijeh Razeghi,Koray Aydin
DOI: https://doi.org/10.1063/5.0177705
IF: 6.6351
2024-01-01
APL Materials
Abstract:The phonon modes of materials contain critical information on the quality of the crystals. Phonon modes also offer a wide range of polarization-dependent resonances in infrared that can be tailored to applications that require large dielectric function contrast in different crystal directions. Here, we investigate the far-field characteristics of MOCVD-grown Ga2O3 thin films. With a combination of cross-polarization FTIR and AFM characterization techniques, we propose an easy and non-invasive route to distinguish κ and β phases of Ga2O3 and study the quality of these crystals. Using numerical methods and cross-polarization spectroscopy, the depolarization characteristics of β-Ga2O3 are examined and depolarization strength values as high as 0.495 and 0.76 are measured, respectively, for 400 and 800 nm-thick β-Ga2O3. The strong birefringence near optical phonon modes of an 800 nm β-Ga2O3 on a sapphire substrate is used to obtain several polarization states for the reflected light in the second atmospheric window 8–14 μm. We anticipate that our findings open a new path for material characterization and wave plate design for the mid-IR range and offer novel possibilities for the future of IR on-chip photonics, thanks to the compatibility of β-Ga2O3 with standard nanofabrication technology.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
What problem does this paper attempt to address?
The paper attempts to address the issue of distinguishing and characterizing different phases of Ga₂O₃ (κ-phase and β-phase) by studying the polarization-sensitive properties of Ga₂O₃ films grown by MOCVD (Metal-Organic Chemical Vapor Deposition) under infrared light, and exploring the potential applications of these films in mid-infrared photonics. Specifically, the main objectives of the paper include: 1. **Distinguishing and characterizing different phases of Ga₂O₃**: By combining polarization-sensitive FTIR (Fourier Transform Infrared Spectroscopy) technology and AFM (Atomic Force Microscopy) characterization techniques, a simple and non-invasive method is proposed to distinguish κ-phase and β-phase Ga₂O₃ and to study the quality of these crystals. 2. **Studying the depolarization characteristics of β-Ga₂O₃**: Using cross-polarized FTIR measurements and numerical simulations, the depolarization characteristics of β-Ga₂O₃ are studied in detail, exploring the impact of defects on optical properties. 3. **Exploring applications in mid-infrared photonics**: Utilizing the strong birefringence characteristics of an 800 nm thick β-Ga₂O₃ film on a sapphire substrate, various polarization states of reflected light are achieved within the second atmospheric window (8-14 μm), providing new avenues for material characterization and the design of waveplates and polarizers. Through these studies, the paper aims to provide new possibilities for future applications in mid-infrared photonics, particularly due to the compatibility of β-Ga₂O₃ films with standard nanofabrication technologies.