Low-temperature photoluminescence characteristic of Tm-doped Ga 2 O 3 films for light emitting diodes application

Zewei Chen,Gaofeng Deng,Katsuhiko Saito,Tooru Tanaka,Qixin Guo
DOI: https://doi.org/10.1016/j.optmat.2024.115142
IF: 3.754
2024-03-10
Optical Materials
Abstract:Tm-doped Ga 2 O 3 films hold significant promise for application in light-emitting diodes (LEDs). A comprehensive understanding of their photoluminescence properties is pivotal for unlocking their full potential. In this work, we present findings on the photoluminescence (PL) spectra of Tm-doped Ga 2 O 3 films, elucidating variations at different measurement temperatures and excitation energies utilizing synchrotron radiation light. The intensity of ultraviolet light (UVL 1 and UVL 2 ) exhibits a temperature dependence and its activation energy illustrates an ionization energy of shallow donor and migration through tunneling of self-trapped holes to triply ionized Ga vacancy (V Ga ) centers forming doubly ionized V Ga acceptors. Additionally, the excitation energy-dependent PL spectra provide insights into the excitation mechanism of Tm ions, indicating a most likely through defects in the Ga 2 O 3 host.
materials science, multidisciplinary,optics
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