Characteristics of Light Emitting Diodes Based on Terbium Doped Ga2O3 Films
Qixin Guo,Yushi Koga,Zewei Chen,Katsuhiko Saito,Tooru Tanaka
DOI: https://doi.org/10.1002/pssr.202300481
2024-01-24
physica status solidi (RRL) - Rapid Research Letters
Abstract:Terbium (Tb) doped Ga2O3 films were grown on Si substrates by pulsed laser deposition at a substrate temperature of 500°C.The electroluminescence (EL) peaks detected at 488, 543, 587, and 622 nm from the Tb doped Ga2O3/Si light emitting diodes (LEDs) correspond to the 5D4 ‐ 7F6, 5D4 ‐ 7F5, 5D4 ‐ 7F4, and 5D4 ‐ 7F3 transitions, respectively. The EL intensity initially increases with current up to 70 mA, followed by a decrease at higher currents. Notably, there is no discernible shift in the EL spectra peaks as the operating current varies from 5 to 90 mA. These findings imply that the Tb doped Ga2O3/Si LED, characterized by its remarkable wavelength stability, holds significant potential for advancing the development of highly efficient LEDs across diverse applications. This article is protected by copyright. All rights reserved.
physics, condensed matter, applied,materials science, multidisciplinary