Abstract:In ultrawide bandgap (UWBG) nitride and oxide semiconductors, increased bandgap (Eg) correlates with greater ionicity and strong electron-phonon coupling. This limits mobility through polar optical phonon scattering, localizes carriers via polarons and self-trapping, broadens optical transitions via dynamic disorder, and modifies the breakdown field. Herein, we use polarized optical transmission spectroscopy from 77-633 K to investigate the Urbach energy (Eu) for many orientations of Fe- and Sn-doped \b{eta}-Ga2O3 bulk crystals. We find Eu values ranging from 60-140 meV at 293 K and static (structural defects plus zero-point phonons) disorder contributes more to Eu than dynamic (finite temperature phonon-induced) disorder. This is evidenced by lack of systematic Eu anisotropy, and Eu correlating more with X-ray diffraction rocking-curve broadening than with Sn-doping. The lowest measured Eu are ~10x larger than for traditional semiconductors, pointing out that band tail effects need to be carefully considered in these materials for high field electronics. We demonstrate that, because optical transmission through thick samples is sensitive to sub-gap absorption, the commonly-used Tauc extraction of bandgap from transmission through Ga2O3 greater than 1-3 micro meter thick is subject to errors. Combining our Eu(T) from Fe-doped samples with Eg(T) from ellipsometry, we extract a measure of an effective electron-phonon coupling indicating increases in weighted 2nd order deformation potential with temperature and a larger value for E parallel b than E parallel c. The large electron-phonon coupling in beta-Ga2O3 suggests that theories of electrical breakdown for traditional semiconductors need expansion to account not just for lower scattering time but also for impact ionization thresholds fluctuating in both time and space.

Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in Β‐ga2o3

Variation from Zero to Negative Thermal Quenching of Phosphor with Assistance of Defect States

Defect energy levels in monoclinic β-Ga2O3

Kinetics of charge carrier recombination in beta-Ga2O3 crystals

Large Negative Thermal Quenching of Yellow Luminescence in Non-Polar InGaN/GaN Quantum Wells

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

The effect of annealing on the Sn-doped (−201) β-Ga2O3 bulk

Optical and Electrical Transport Properties of Α-Ga2o3 Thin Films with Electrical Compensation of Sn Impurities

Photoluminescence spectroscopy of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3

Quantification of the strong, phonon-induced Urbach tails in \b{eta}-Ga2O3 and their implications on electrical breakdown

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Ultra-Wide Bandgap Gallium Oxide Films: UV-Luminescence and Phonon Dynamics at Extreme Temperatures

Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN

Thermally Activated Carriers Transfer Process For The Success Of Ingan/Gan Multi-Quantum Well Light Emitting Devices

Low-temperature photoluminescence characteristic of Tm-doped Ga 2 O 3 films for light emitting diodes application

Negative Thermal Quenching of the 3.338ev Emission in ZnO Nanorods

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Atomic scale mechanism of β to γ phase transformation in gallium oxide

Origins of Green Band Emission in High-Temperature Annealed N-Doped Zno

Optical Properties and Exciton Localization in Ganas/Gaas