Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Control of growth orientation of GaN nanowires

Growth of oriented GaN nanowires by controlling nucleation conditions

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Orientation and Temperature Dependence of the Tensile Behavior of GaN Nanowires: an Atomistic Study

<110>-growth orientation dependence of Ga<sub>2</sub>O<sub>3</sub> nanowires on Cu<sub>3</sub>As seeds via vapor-solid-solid mechanism

-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism

Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Controlled Growth and Electronic Properties of Gallium Nitride Nanowires

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Self-catalyzed Metal Organic Chemical Vapor Deposition Growth of Vertical Β-Ga2o3 Nanowire Arrays.

Crystal Phase And Growth Orientation Dependence Of Gaas Nanowires On Nixgay Seeds Via Vapor-Solid-Solid Mechanism

Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer

Controllable in Situ Growth and Photoluminescence of Straight and Zigzag-Shaped Nanowires of Gan

Single-crystalline Wurtzite GaN Nanowires and Zigzagged Nanostructures Fabricated by Sublimation Sandwich Method

Controlled Growth of Gallium Nitride Single-Crystal Nanowires Using a Chemical Vapor Deposition Method

Preferred growth direction of III–V nanowires on differently oriented Si substrates

Manipulated Growth of Gaas Nanowires: Controllable Crystal Quality and Growth Orientations Via A Supersaturation-Controlled Engineering Process

First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions

Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition

Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition