Field emission from AlGaN nanowires with low turn-on field

Filippo Giubileo,Antonio Di Bartolomeo,Yun Zhong,Songrui Zhao,Maurizio Passacantando

DOI: https://doi.org/10.48550/arXiv.2008.03003

2020-08-07

Abstract:We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The tip-shaped anode gives access to local properties and allows collecting electrons emitted from areas as small as 1$\mu m^2$. The field emission characteristics are analyzed in the framework of Fowler-Nordheim theory and we find a field enhancement factor as high as $\beta$ = 556 and a minimum turn-on field $E_{turn-on}$ = 17 V/$\mu$m for a cathode-anode separation distance d = 500 nm. We show that for increasing separation distance, $E_{turn-on}$ increases up to about 35 V/$\mu$m and $\beta$ decreases to 100 at d = 1600 nm. We also demonstrate the time stability of the field emission current from AlGaN nanowires for several minutes. Finally, we explain the observation of modified slope of the Fowler-Nordheim plots at low fields in terms of non-homogeneous field enhancement factors due to the presence of protruding emitters.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the field - emission characteristics of aluminum gallium nitride (AlGaN) nanowires. Specifically, the researchers prepared AlGaN nanowires by molecular beam epitaxy technology, and used the experimental device in the scanning electron microscope, with the nano - manipulated tungsten tip as an electrode, to study the field - emission properties of these nanowires. The main objectives of the study include:

1. **Low turn - on field strength**: The researchers hope to find AlGaN nanowires with a lower turn - on field strength, which will be helpful for the development of efficient field - emission devices.
2. **Field enhancement factor**: By analyzing the field - emission characteristics, the researchers hope to determine the field enhancement factor of AlGaN nanowires, which is crucial for understanding the electric field distribution on the nanowire surface and optimizing device performance.
3. **Field - emission stability**: The researchers are also concerned about the field - emission current stability of AlGaN nanowires over a long period of time, which is a key indicator for evaluating their suitability as cold - cathode materials.
4. **Local field - emission characteristics**: By using a tip - shaped anode, the researchers can obtain the field - emission characteristics of local areas, so as to better understand the influence of the non - uniformity of the nanowire surface on the field - emission performance.

### Main findings
- **Low turn - on field strength**: The study found that at an anode - cathode spacing of 500 nm, the lowest turn - on field strength of AlGaN nanowires is 17 V/µm.
- **High field enhancement factor**: At the same spacing, the field enhancement factor is as high as 556. As the spacing increases, the field enhancement factor gradually decreases to about 100 (at a spacing of 1600 nm).
- **Temporal stability**: The study also demonstrated the field - emission current stability of AlGaN nanowires within a few minutes, indicating their potential as cold - cathode materials.
- **Non - uniform field enhancement factor**: The researchers observed that at a low field strength, the slope of the Fowler - Nordheim plot changes, which is explained as a non - uniform field enhancement factor due to the existence of emitters of different heights.

### Conclusion
This study comprehensively explored the field - emission characteristics of AlGaN nanowires, demonstrating their advantages in terms of low turn - on field strength, high field enhancement factor, and good temporal stability, providing important experimental data and theoretical support for the development of efficient and stable field - emission devices.