Synthesis and field emission properties of aluminum nitride nanocones

C LIU,Z HU,Q WU,X WANG,Y CHEN,W LIN,H SANG,S DENG,N XU
DOI: https://doi.org/10.1016/j.apsusc.2005.03.101
IF: 6.7
2005-01-01
Applied Surface Science
Abstract:One-dimensional aluminum nitride nanostructures have displayed superior field emission due to the combination of small or negative electron affinity and one-dimensional quantum confinement effect. Herein we report on the synthesis of quasi-aligned AlN nanocones via chemical vapor deposition on the Ni-coated silicon wafer at 750°C through the reaction between AlCl3 vapor and NH3/N2 gas. The as-prepared hexagonal AlN nanocones grow preferentially along c-axis with the tips’ sizes of about 60nm and the lengths up to several microns. The field emission measurement exhibits a notable electron emission with the apparent turn-on field of 17.8V/μm, indicating their potential applications as the field emitters. Due to space charge effect, the corresponding Fowler–Nordheim plot shows a two-sectional characteristic with the field enhancement factors of 1450 and 340 at low and high electric fields, respectively.
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