Abstract:Wide bandgap semiconductor nanostructures have been the research focus in recent years because of their unique physical and chemical properties and low electron affinity, which benefits for tunnel emission (Geis et al., 1991; Zhirnov et al., 1997; Kang et al., 2001; Liu et al., 2009). Among them, AlN nanostructures should deserve paid much attention due to their high melting-point (> 2300 oC), high thermal conductivity (K ~ 320 W/m·k), large exciton binding energy and strong endurance to harsh environment (Davis, 1991; Nicolaescu et al., 1994; Sheppard et al., 1990; Ponthieu et al., 1991). There have emerged many synthesis methods to fabricate different morphology of AlN nanostructures, such as nanocone, nanorod, and nanorods (Liu et al., 2009; Zhao et al., 2004; Liu et al., 2004; Tang et al., 2005; Shi et al., 2005, 2006; Wu et al., 2003; Paul et al., 2008). But for actual device applications of AlN nanostructures, there still exist many technique questions, which need to be solved as soon as possible. Firstly, the controlled growth of large area AlN nanostructures with uniform morphology is very difficult because of which cares about the uniformity of their physical properties in devices. Secondly, systemic investigation on the field emission (FE) properties of AlN nanostructures is not enough, which has fallen behind the development of the preparing method. Thirdly, it is unknown to us all that what factors take effect on their FE behaviors and how to find optimal growth conditions for their device applications. So developing a suitable way to controllably prepare AlN nanostructures and investigate on their FE properties in detail is essential for promoting their progress in FE area.

Vertically aligned one-dimensional AlN nanostructures on conductive substrates: Synthesis and field emission

Synthesis and field emission properties of aluminum nitride nanocones

Controlled Growth and Field Emission of Vertically Aligned AlN Nanostructures with Different Morphologies

Patterned growth and field-emission properties of AlN nanocones

Low temperature growth of vertically aligned AlN nanocone arrays without catalysts and investigation on their field emission behaviors

Patterned Growth and Field Emission Properties of AlN Nanocones

Evolution of Aluminum Nitride Nanostructures from Nanoflower to Thin Film on Silicon Substrate by Direct Nitridation of Aluminum Precursor

Low-Temperature Growth and Field Emission Property of AlN Nanocones

Field Emission of Aluminum Nitride Nanocones Deposited on Titanium Substrate

6-Fold-symmetrical aln hierarchical nanostructures: Synthesis and field-emission properties

Construction of AlN-Based Core–Shell Nanocone Arrays for Enhancing Field Emission

0001] oriented aluminum nitride one-dimensional nanostructures: synthesis, structure evolution, and electrical properties

The Controlled Growth of Long AlN Nanorods and In-situ Investigation on Their Field Emission Properties

Aln Nanorod and Nanoneedle Arrays Prepared by Chloride Assisted Chemical Vapor Deposition for Field Emission Applications

Controlled synthesis of ultra-long AlN nanowires in different densities and in situ investigation of the physical properties of an individual AlN nanowire.

Vapor-Solid Growth And Characterization Of Aluminum Nitride Nanocones

Tuning the Field Emission Properties of AlN Nanocones by Doping

Progress in Preparation of 1D AlN Nano-Structures

One-Step, Catalyst-Free, Scalable in Situ Synthesis of Single-Crystal Aluminum Nanowires in Confined Graphene Space

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

In-Situ Chloride-Generated Route to Different AlN Nanostructures on Si Substrate