Abstract:Wide bandgap semiconductor nanostructures have been the research focus in recent years because of their unique physical and chemical properties and low electron affinity, which benefits for tunnel emission (Geis et al., 1991; Zhirnov et al., 1997; Kang et al., 2001; Liu et al., 2009). Among them, AlN nanostructures should deserve paid much attention due to their high melting-point (> 2300 oC), high thermal conductivity (K ~ 320 W/m·k), large exciton binding energy and strong endurance to harsh environment (Davis, 1991; Nicolaescu et al., 1994; Sheppard et al., 1990; Ponthieu et al., 1991). There have emerged many synthesis methods to fabricate different morphology of AlN nanostructures, such as nanocone, nanorod, and nanorods (Liu et al., 2009; Zhao et al., 2004; Liu et al., 2004; Tang et al., 2005; Shi et al., 2005, 2006; Wu et al., 2003; Paul et al., 2008). But for actual device applications of AlN nanostructures, there still exist many technique questions, which need to be solved as soon as possible. Firstly, the controlled growth of large area AlN nanostructures with uniform morphology is very difficult because of which cares about the uniformity of their physical properties in devices. Secondly, systemic investigation on the field emission (FE) properties of AlN nanostructures is not enough, which has fallen behind the development of the preparing method. Thirdly, it is unknown to us all that what factors take effect on their FE behaviors and how to find optimal growth conditions for their device applications. So developing a suitable way to controllably prepare AlN nanostructures and investigate on their FE properties in detail is essential for promoting their progress in FE area.

6-Fold-symmetrical aln hierarchical nanostructures: Synthesis and field-emission properties

Preparation and Characterization of AlN-Based Hierarchical Nanostructures with Improved Chemical Stability

Vertically aligned one-dimensional AlN nanostructures on conductive substrates: Synthesis and field emission

Aln Nanorod and Nanoneedle Arrays Prepared by Chloride Assisted Chemical Vapor Deposition for Field Emission Applications

Synthesis and field emission properties of aluminum nitride nanocones

Catalyst-Free Synthesis, Morphology Evolution and Optical Property of One-Dimensional Aluminum Nitride Nanostructure Arrays

Controlled Growth and Field Emission of Vertically Aligned AlN Nanostructures with Different Morphologies

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

Six-Fold-Symmetrical Hierarchical Zno Nanostructure Arrays: Synthesis, Characterization, and Field Emission Properties

Growth of AlN Nanobelts, Nanorings and Branched Nanostructures

Patterned Growth and Field Emission Properties of AlN Nanocones

Fabrication of ZnO/Al2O3 core–shell nanostructures and crystalline Al2O3 nanotube

Evolution of Aluminum Nitride Nanostructures from Nanoflower to Thin Film on Silicon Substrate by Direct Nitridation of Aluminum Precursor

Patterned growth and field-emission properties of AlN nanocones

0001] oriented aluminum nitride one-dimensional nanostructures: synthesis, structure evolution, and electrical properties

Low-Temperature Growth and Field Emission Property of AlN Nanocones

Facile synthesis of monodisperse aluminum nitride microspheres

The Controlled Growth of Long AlN Nanorods and In-situ Investigation on Their Field Emission Properties

Controllable growth of hierarchical AlN nanostructures based on dynamic equilibrium

Controllable Synthesis of One-Dimensional Aluminum Nitride Nanostructures Through Vapor-Solid Epitaxial Growth

Chemical Vapor Deposition Growth of Inn Nanostructures: Morphology Regulation and Field Emission Properties