Abstract:Flexible field emission (FE) arrays have a wide range of applications in next generation low-cost, lightweight and wearable electronics, roll-up displays, and large-area circuits on curved objects, yet the growth of tapered, high-quality single-crystalline nanostructure-based emitters on flexible substrates with superior FE properties remains challenging and related work is limited. On the other hand, our recent studies have shown that silicon carbide (SiC) 1D nanostructures could meet nearly any stringent requirement for an ideal FE emitter. In this contribution, we report the growth of quasi-aligned, single-crystalline n-type doped (N-doped) 3C-SiC nanoneedles (3C-SiCNNs) on highly flexible carbon fabric via the catalyst assisted pyrolysis of polysilazane. The as-synthesized SiCNNs possess a tapered structure with tiny clear tips with sizes of several to tens of nanometers. The fabricated 3C-SiCNNs have extremely low emission turn-on fields (E-on) in the range of 0.5-1.6 V mu m(-1) with an average of 1.1 V mu m(-1), which is comparable to the lowest value ever reported for 1D nanostructure emitters that, however, are grown on rigid substrates. Specifically, our SiCNN arrays on carbon fabric are mechanically and electrically robust, and can withstand mechanical bending up to 500 times and still retain excellent FE performance with E-on of similar to 1.1 V mu m(-1). The field-enhancement factor has been calculated to be 6.5 x 10(3). The superior FE properties can be attributed to the significant enhancements of the tapered unique morphology and N-doping of the SiCNNs. Calculations based on local density functional theory suggest that nitrogen dopants in the 3C-SiC nanostructure could favor a more localized impurity state near the conduction band edge, which improves the electron field emission. We strongly believe that the present work will provide a new insight into the fabrication of flexible field emission arrays with ultralow turn-on fields enhanced by both shape and doping.

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites

Well-aligned SiC nanoneedle arrays for excellent field emitters

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Enhanced field emission of p-type 3C-SiC nanowires with B dopants and sharp corners

Field Emission from Nonaligned SiC Nanowires

Well-Aligned Nisi/Si Heterostructured Nanowire Arrays As Field Emitters

Shape And Doping Enhanced Field Emission Properties Of Quasialigned 3c-Sic Nanowires

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Growth Of N-Type 3c-Sic Nanoneedles On Carbon Fabric: Toward Extremely Flexible Field Emission Devices

Superior integrated field emission cathode with ultralow turn‐on field and high stability based on SiC nanocone arrays

Facile synthesis of novel one-dimensional hierarchical SiC@SiO2@c-C nanostructures and their field emission properties

Enhanced Field Emission of Au Nanoparticle-Decorated SiC Nanowires

Crystallinity-Controlled Germanium Nanowire Arrays: Potential Field Emitters

Controlled growth of SiC flexible field emitters with clear and sharp tips

Nanoparticle-density-dependent Field Emission of Surface-Decorated SiC Nanowires

Fabrication of cone-shaped CNF/SiC-coated Si-nanocone composite structures and their excellent field emission performance

Stable Field Emission from Single-Crystalline Zirconium Carbide Nanowires