Abstract:Flexible field emission (FE) arrays have a wide range of applications in next generation low-cost, lightweight and wearable electronics, roll-up displays, and large-area circuits on curved objects, yet the growth of tapered, high-quality single-crystalline nanostructure-based emitters on flexible substrates with superior FE properties remains challenging and related work is limited. On the other hand, our recent studies have shown that silicon carbide (SiC) 1D nanostructures could meet nearly any stringent requirement for an ideal FE emitter. In this contribution, we report the growth of quasi-aligned, single-crystalline n-type doped (N-doped) 3C-SiC nanoneedles (3C-SiCNNs) on highly flexible carbon fabric via the catalyst assisted pyrolysis of polysilazane. The as-synthesized SiCNNs possess a tapered structure with tiny clear tips with sizes of several to tens of nanometers. The fabricated 3C-SiCNNs have extremely low emission turn-on fields (E-on) in the range of 0.5-1.6 V mu m(-1) with an average of 1.1 V mu m(-1), which is comparable to the lowest value ever reported for 1D nanostructure emitters that, however, are grown on rigid substrates. Specifically, our SiCNN arrays on carbon fabric are mechanically and electrically robust, and can withstand mechanical bending up to 500 times and still retain excellent FE performance with E-on of similar to 1.1 V mu m(-1). The field-enhancement factor has been calculated to be 6.5 x 10(3). The superior FE properties can be attributed to the significant enhancements of the tapered unique morphology and N-doping of the SiCNNs. Calculations based on local density functional theory suggest that nitrogen dopants in the 3C-SiC nanostructure could favor a more localized impurity state near the conduction band edge, which improves the electron field emission. We strongly believe that the present work will provide a new insight into the fabrication of flexible field emission arrays with ultralow turn-on fields enhanced by both shape and doping.

Shape And Doping Enhanced Field Emission Properties Of Quasialigned 3c-Sic Nanowires

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

Well-aligned SiC nanoneedle arrays for excellent field emitters

Enhanced Field Emission of Quasi-aligned 3C-SiC Nanoarrays Alloyed with Tiny Co Nano-Tips

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Growth Of N-Type 3c-Sic Nanoneedles On Carbon Fabric: Toward Extremely Flexible Field Emission Devices

Enhanced Field Emission of Au Nanoparticle-Decorated SiC Nanowires

Nanoparticle-density-dependent Field Emission of Surface-Decorated SiC Nanowires

Field Emission Study Of Sic Nanowires/Nanorods Directly Grown On Sic Ceramic Substrate

Controlled growth of SiC flexible field emitters with clear and sharp tips

Controllable growth of high-density tapered N-doped SiC nanowires arrays

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Controlled Al-Doped Single-Crystalline 6H-Sic Nanowires

Well-Aligned Nisi/Si Heterostructured Nanowire Arrays As Field Emitters

Field emission property of aligned and random SiC nanowires arrays synthesized by a simple vapor–solid reaction

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Stable Field Emission from Vertically Oriented SiC Nanoarrays

P-Type 3C-Sic Nanowires and Their Optical and Electrical Transport Properties

Needle-Shaped Silicon Carbide Nanowires: Synthesis and Field Electron Emission Properties

Growth of Tapered SiC Nanowires on Flexible Carbon Fabric: Toward Field Emission Applications

High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites