Abstract:Abstract In this study, the high-density SiC/SiO 2 core–shell nanowires were synthesized on the nickel coated SiO 2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an efficient strategy for the production of SiC/SiO 2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO 2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO 2 core–shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C–SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor–liquid–solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO 2 nanowires.

Controlled Al-Doped Single-Crystalline 6H-Sic Nanowires

Ultrafast growth of single-crystalline Si nanowires

Controlled Al-doped single-crystalline silicon nitride nanowires synthesized via pyrolysis of polymer precursors.

Shape And Doping Enhanced Field Emission Properties Of Quasialigned 3c-Sic Nanowires

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Triangular prism-shaped p-type 6H-SiC nanowires

One-Step, Catalyst-Free, Scalable in Situ Synthesis of Single-Crystal Aluminum Nanowires in Confined Graphene Space

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

The Phase Selection Law in the Growth of Hexagonal Diamond Silicon Nanowires by Controlling Chemical Potential

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Morphology-Controlled Synthesis of SiC Nanowires by Catalyst-Assisted Pyrolysis of Polymeric Precursor

Ultra‐Long Single‐Crystalline Α‐si3n4nanowires: Derived from a Polymeric Precursor

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Controllable growth of high-density tapered N-doped SiC nanowires arrays

Large Areas of Centimeters-Long SiC Nanowires Synthesized by Pyrolysis of a Polymer Precursor by a CVD Route

Atomically Smooth P-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

H2-assisted control growth of Si nanowires

In situ catalytic growth of Al2O3 and Si nanowires

Morphology Control of Si-Based Nanostructures by Catalyst-Assisted Pyrolysis of Preceramic Precursors

The synthesis and ultraviolet photoluminescence of 6H–SiC nanowires by microwave method