Abstract:Utilizing three-terminal tunnel emission of ballistic electrons and holes in a planar tunnel transistor with a Mott-barrier collector, we have developed a method to self-consistently determine the energy gap of a semiconductor and band discontinuities at a semiconductor heterojunction without using a priori material parameters. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs (100) single-barrier double heterostructures with AlxGa1-xAs as the model ternary III-V compounds. Electronic band gaps of the AlGaAs alloys and band offsets at the GaAs/AlGaAs (100) interfaces are measured with a resolution of several meV at 4.2 K. The direct-gap Gamma band offset ratio for the GaAs/AlGaAs (100) interface is found to be 59:41 (+/-3%). Reexamination of our previous experiment [W. Yi et al., Appl. Phys. Lett. 95, 112102 (2009)] revealed that, in the indirect-gap regime, ballistic electrons from direct tunnel emissions probe the X valley in the conduction band, while those from Auger-like scattering processes in the metal base film probe the higher-lying L valley. Such selective electron collection may be explained by their different momentum distributions and parallel momentum conservation at the quasiepitaxial Al/GaAs (100) interface. We argue that the present method is in principle applicable to arbitrary type-I semiconductor heterostructures.

Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces

Doping‐dependence of Subband Energies in Quantized Electron Accumulation at InN Surfaces

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy

Determination of the transition point from electron accumulation to depletion at the surface of In x Ga1− x N films

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

The Discrepancies Between Theory and Experiment in the Optical Emission of Monolayer In(Ga)N Quantum Wells Revisited by Transmission Electron Microscopy

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Electronic Structures and Optical Properties of Ga-Rich InxGa1−xN Nanotubes

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Electronic Structure of Gainn Semiconductors Investigated by X-Ray Absorption Spectroscopy

Nanoscale Cathodoluminescence Spectroscopy Probing the Nitride Quantum Wells in an Electron Microscope

Nanoscale Cathodoluminescence Spectroscopy Probing the Nitride Quantum Wells in an Electron Microcope

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Conduction Band Offset and Electron Effective Mass in Gainnas/Gaas Quantum-Well Structures with Low Nitrogen Concentration

Compositional Modulation in in X Ga 1−x N: TEM and X-ray Studies

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Structural analysis of InxGa1-xN/GaN MQWs by different experimental methods

Indium nitride: Evidence of electron accumulation

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells