Abstract:Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

Rare-earth defects in GaN: A systematic investigation of the lanthanide series

Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association

Electronic structure of rare-earth impurities in GaAs and GaN

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Using ground state and excited state density functional theory to decipher 3 d dopant defects in GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Enhancing Electronic and Magnetic Properties in Eu‐Doped GaN Nanowires via p‐f Hybridization of Eu‐Defect Complexes

Donor and Acceptor Characteristics of Native Point Defects in GaN

Luminescence properties of defects in GaN

Direct Detection of Rare Earth Ion Distributions in Gallium Nitride and Its Influence on Growth Morphology

First-Principles Exploration of Defect-Pairs in GaN

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Optoelectronic properties exploration of native point defects on GaN nanowires

Hybrid density functional study of optically active Er$^{3+}$ centers in GaN

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

Native defects in gallium nitride

Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Understanding band gaps of lanthanide niobates via first-principles calculations

Correlation of Doping, Structure, and Carrier Dynamics in a Single GaN Nanorod