Abstract:Electron leakage currents seriously hinder GaN-based blue laser diodes (LDs) from high wall-plug efficiencies. Inserting an ultra-thin AlGaN electron blocking layer (EBL) in the epitaxy structure is a major technique to suppress the leakage currents for which a high Al composition in the EBL is necessary. Despite many studies on the optimization of the compositions of EBLs, it is questionable whether they reach the designed value in real growths by metal-organic vapor phase epitaxy. We investigate the influence of the growth conditions of upper cladding layers (CLs) on the underlying EBLs. A strong composition degradation of the EBL is observed when the growth rate of the CL is low, which drastically reduces the output performance of both LEDs and LDs. A 30-nm fast-growing protecting layer can efficiently prevent the EBL from such degradation. The phenomenon cannot be explained by a composition pulling effect nor an etch effect by hydrogen, but by a mutual solid solution between the EBL and the adjacent CL. The solution process is found thermally favored by calculating the Gibbs energy where strain and entropies are considered. It is inferred that the chemically active Ga adatoms at the surface play an important role in accelerating the solution process. Based on these considerations, we introduce a random walk model to clarify the kinetic influence of CL growth rates on EBL degradation semi-quantitatively. The results help to understand the subtle process in the growth of heterostructures and the transport process of GaN-based LDs.

Optical Defect in Gan-Based Laser Diodes Detected by Cathodoluminescence

Cathodoluminescence Study of InGaN MQW Laser Diodes Using Laser Lift‐off Technique

Defects and Degradation of Nitride-based Laser Diodes

Compositional Degradation of the Electron Blocking Layers Through Solid-Solution in GaN-based Laser Diodes

Stimulated Emission in Gan-Based Laser Diodes Far below the Threshold Region

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

376 nm High-Power UV-A Laser Diodes With GaN Waveguide

Stimulated Emission Related Anomalous Change Of Electrical Parameters At Threshold In Gan-Based Laser Diodes

Near-Field Spectroscopy Of Gan Blue Light Emission Diode

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Observation of Optically-Active Metastable Defects in Undoped Gan Epilayers

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes.

Characterization of GaInN/GaN layers for green emitting laser diodes

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes Analysis of Aged Devices Using Fluorescence Microscopy is Used to Assess the Role That Point Defects Play in Generating Optical Damage and Additional Defects.

Degradation Study of InGaN-based Laser Diodes Grown on Si

Catastrophic-Optical-Damage-Free InGaN Laser Diodes With Epitaxially Formed Window Structure

Study of GaN Light-Emitting Diodes Obtained by Laser-Assisted Debonding

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes