Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Stimulated Emission Related Anomalous Change Of Electrical Parameters At Threshold In Gan-Based Laser Diodes

Stimulated Emission in Gan-Based Laser Diodes Far below the Threshold Region

A-LOC GaAlAs/GaAs laser and its characteristics

Self-Pulsation Dynamics in GaAs/AIGaAs Quantum Cascade Lasers

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Saturation Of The Junction Voltage In Gan-Based Laser Diodes

Self-Pulsation Dynamics in GaAs/AlGaAs Quantum Cascade Lasers

Numerical Study of Transient Oscillation in Gain-Switched InGaN-Based Laser Diodes

Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes

Competitive Behavior of Photons Contributing to Junction Voltage Jump in Narrow Band-Gap Semiconductor Multi-Quantum-well Laser Diodes at Lasing Threshold

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

Comparative Study of the Differential Resistance of Gaas- and Gan-Based Laser Diodes

A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes Before Lasing

Differential Resistance of GaN-based Laser Diodes with and Without Polarization Effect

Investigation of Output Nonlinearity Mechanisms in Gan-Based Blue Laser Diodes

Anomalous Linear Photogalvanic Effect Observed in A Gan-Based Two-Dimensional Electron Gas

Optical Defect in Gan-Based Laser Diodes Detected by Cathodoluminescence

Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current

Donor-Related Cathodoluminescence Of P-Algan Electron Blocking Layer Embedded In Ultraviolet Laser Diode Structure

Strain-Related Degradation of GaN-Based Blue Laser Diodes

Redefinition the quasi-fermi energy levels separation of electrons and holes inside and outside quantum wells of GaN based multi-quantum-well semiconductor laser diodes