Abstract:The photogalvanic effect (PGE) enables the generation of photocurrent at zero bias and without the need of building p – n junction, showing potential applications in the low-power two-dimensional optoelectronics. However, the PGE photocurrent is generally small and high photocurrents are needed which can be used as the photodetector in practice. Therefore in this paper, we built two photodetectors, namely armchair and zigzag photodetectors, based on the Be 2 Al monolayer with its stabilization has been proved, and further studied linear and elliptical PGEs in these devices. It was found that when introducing the vacancy-doping and substitution-doping corresponding to the increasing of asymmetry from D 6 H to D 2 H or C 2 V for the Be 2 Al monolayer, the strength of PGE photocurrents have been considerably enlarged, showing robust PGEs generated in the armchair and zigzag Be 2 Al photodetectors. Moreover, the photocurrents mainly show the relations cos(2 θ ) for the armchair photodetector and sin(2 θ + θ 0 ) for the zigzag photodetector with their largest strength reaching up to 34.8 and 4.2 /photon, respectively. In addition, results revealed that the linear PGEs were stronger than the elliptical PGEs, and for the circularly polarized light the strength of photocurrents did not change anymore exhibiting the existence of isotropic PGEs. Finally, high extinction ratios exhibited that the armchair and zigzag Be 2 Al photodetectors were all polarization-sensitive. In conclude, these results manifested great potential applications of the Be 2 Al photodetectors on high-performance optoelectronics and nanoelectronic devices.

Anomalous Linear Photogalvanic Effect Observed in A Gan-Based Two-Dimensional Electron Gas

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Anomalous Photogalvanic Effect of Circularly Polarized Light Incident on the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures at Room Temperature

Circular Photogalvanic Effect of the Two-Dimensional Electron Gas in AlxGa1−xN∕GaN Heterostructures under Uniaxial Strain

Photogalvanic Effects for Interband Absorption in AlGaN∕GaN Superlattices

Room-temperature Spin-Oriented Photocurrent under Near-Infrared Irradiation and Comparison of Optical Means with Shubnikov De-Haas Measurements in AlxGa1−xN∕GaN Heterostructures

Optical manipulation of linear magnetogyrotropic photogalvanic effect in a GaAs/Al0.3Ga0.7As heterostructure

Circular photogalvanic effect at inter-band excitation in InN

Stimulated Emission Related Anomalous Change Of Electrical Parameters At Threshold In Gan-Based Laser Diodes

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Strain-modulated anomalous circular photogalvanic effect in p-type GaAs

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Anomalous Circular Photogalvanic Effect of the Spin-Polarized Two-Dimensional Electron Gas in Mg0.2Zn0.8O/ZnO Heterostructures at Room Temperature

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Linear and elliptical photogalvanic effects in two-dimensional Be2Al photodetector

Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures

Linear Electro-Optic Effect Due to the Built-in Electric Field in InGaN/GaN Quantum Wells

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Influence of Algan/Gan Interface Polarization Fields on the Properties of Photoconductive Detectors

Cathodoluminescence of quantized energy states at AlGaN/GaN interface

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures