Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Investigation on the mechanism of carrier recombination in the GaN-based blue laser diode before lasing

Suppression of Recombination in Waveguide in C-Plane InGaN-based Green Laser Diodes

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Redefinition the quasi-fermi energy levels separation of electrons and holes inside and outside quantum wells of GaN based multi-quantum-well semiconductor laser diodes

Down-scaling of GaN-based Laser Diodes for High-Speed Modulation Characteristics

Effects of TMIn Flow Rate During Quantum Barrier Growth on Multi-quantum Well Material Properties and Device Performance in GaN-Based Laser Diodes

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Enhancing the Blue GaN Laser Diodes by Modifying the First Barrier Structure and Adjusting the Growth Conditions of Quantum Wells

A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes Before Lasing

The Effect of Composite GaN/InGaN Last Barrier Layer on Electron Leakage Current and Modal Gain of InGaN‐based Multiple Quantum Well Laser Diodes

Performance Improvement of InGaN-based Laser Grown on Si by Suppressing Point Defects.

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.

High Efficient GaN-based Laser Diodes with Tunnel Junction