Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Investigation on the mechanism of carrier recombination in the GaN-based blue laser diode before lasing

A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes Before Lasing

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

Suppression of Recombination in Waveguide in C-Plane InGaN-based Green Laser Diodes

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Identification of degradation mechanisms of blue InGaN/GaN laser diodes

Strain-Related Degradation of GaN-Based Blue Laser Diodes

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

Effect of Inhomogeneous Broadening on Threshold Current of GaN-based Green Laser Diodes

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

Investigation of Output Nonlinearity Mechanisms in Gan-Based Blue Laser Diodes

Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current

A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode

Carrier Recombination Mechanisms and Efficiency Droop in GaInN/GaN Light-Emitting Diodes

A Differential Carrier Lifetime Analysis on GaN-based LED’s Quantum Efficiency

Advantage Of Tapered And Graded Algan Electron Blocking Layer In Ingan-Based Blue Laser Diodes

Study of Equivalent Circuit of GaN Based Laser Chip and Packaged Laser

Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes.