Abstract:An enhancement of radiative recombination in GaInN/GaN heterostructures is being pursued by a reduction of defects associated with threading dislocations and a structural control of piezoelectric polarization in the active light-emitting regions. First, in conventional heteroepitaxy on sapphire substrate along the polar c-axis of GaN, green and deep green emitting light-emitting diode (LED) wafers are being developed. By means of photoluminescence at variable low temperature and excitation density, internal quantum efficiencies of 0.18 for LEDs emitting at 530nm and 0.08 for those emitting at 555nm are determined. Those values hold for the high current density of 50A/cm2 of high-power LED lamps. In bare epi dies, we obtain efficacies of 16lm/W. At 780A/cm2 we obtain 22lm when measured through the substrate only. The 555nm LED epi material under pulsed photoexcitation shows stimulated emission up to a wavelength of 485nm. This strong blue shift of the emission wavelength can be avoided in homoepitaxial multiple quantum well (MQW) and LED structures grown along the non-polar a- and m-axes of low-dislocation-density bulk GaN. Here, wavelength-stable emission is obtained at 500 and 488nm, respectively, independent on excitation power density opening perspectives for visible laser diodes.

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

The Critical Impact of the Waveguide Thickness on the Optical and Threshold Behaviors of InGaN-based Green Laser Diodes

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Advantage Of Tapered And Graded Algan Electron Blocking Layer In Ingan-Based Blue Laser Diodes

Characterization of GaInN/GaN layers for green emitting laser diodes

The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Optical-mode study of galium nitrate based laser diodes

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Optical and electrical properties of bandgap shifted 1.55-/spl mu/m laser diodes

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

A design and comparative investigation of graded AlxGa1 − x N QB for W-Al0.58GaN/W-Al0.64–0.58 GaN DUV laser diode on AlN substrate

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.

Investigation of GaAs-Based Laser Diode Adopting an Al Composition Gradient Double Waveguide Structure and its Photoelectric Properties

Optimization of p-cladding layer utilizing polarization doping for Blue-Violet InGaN laser diodes

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques