Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

The Critical Impact of the Waveguide Thickness on the Optical and Threshold Behaviors of InGaN-based Green Laser Diodes

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

Effect of Inhomogeneous Broadening on Threshold Current of GaN-based Green Laser Diodes

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Confinement Factor and Absorption Loss of AlInGaN Based Laser Diodes Emitting from Ultraviolet to Green

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.

Optimal waveguide structure for low-threshold InGaN/GaN-based photonic-crystal surface-emitting lasers

Suppression of Recombination in Waveguide in C-Plane InGaN-based Green Laser Diodes

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Improvement of Characteristics of InGaN-based Laser Diodes with Undoped InGaN Upper Waveguide Layer

Compositional Degradation of the Electron Blocking Layers Through Solid-Solution in GaN-based Laser Diodes

Suppression of Substrate Mode in GaN-based Green Laser Diodes

Optical Characterization of InGaN/GaN Quantum Well Active Region of Green Laser Diodes

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

376 nm High-Power UV-A Laser Diodes With GaN Waveguide