Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures

High Performance of AlGaN Deep-Ultraviolet Light Emitting Diodes Due to Improved Vertical Carrier Transport by Delta-Accelerating Quantum Barriers

A design and comparative investigation of graded AlxGa1 − x N QB for W-Al0.58GaN/W-Al0.64–0.58 GaN DUV laser diode on AlN substrate

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

AlGaN-based UV-B laser diode with a high optical confinement factor

Enhanced Carrier Injection in AlGaN-based Deep Ultraviolet Light-emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Optimization of p-cladding layer utilizing polarization doping for Blue-Violet InGaN laser diodes

Compositional Degradation of the Electron Blocking Layers Through Solid-Solution in GaN-based Laser Diodes

Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer

Influence of barrier height and p-cladding layer on electroluminescent performance of AlGaN deep ultraviolet light-emitting diodes

Investigation on the mechanism of carrier recombination in the GaN-based blue laser diode before lasing

Compositionally Graded Iii-Nitride Alloys: Building Blocks For Efficient Ultraviolet Optoelectronics And Power Electronics