Abstract:Semiconductor laser is one of the most critical components in the field of modern communication. Research and development of single-mode semiconductor laser with high stability, high power, high beam quality and narrow line width is an important research area in this field. In this paper, A novel edge-emitting semiconductor laser diode structure is proposed. In the structure an active multimode interference waveguide structure serves as a main gain region. To modulate the longitudinal mode of the laser, a gain-coupled distributed feedback(DFB) laser based on high order surface gain coupled grating is introduced into the structure as well. The novel structure is then fabricated and compared with an conventional DFB laser. The experimental results show that higher slope efficiency and output power are achieved with the proposed structure than those with the conventional distributed feedback semiconductor lasers. The novel structure is also compared with conventional MMI laser with only Fabry-Parot(FP) cavity. The result shows that the proposed structure has higher beam quality and better stability than the FP cavity multimode interference waveguide lasers. To enhance the gain contrast in the quantum wells without introducing the effective index-coupled effect, the groove length and depth are well designed. Our device provides a single longitudinal mode with the maximum CW output power up to 53.8 mW/facet at 981.21 nm and 400 mA without facet coating, 3 dB linewidth < 13.6 pm, and SMSR > 32 dB. Optical bistable characteristic is observed with a threshold current difference. Meanwhile, by using high-order distribution feedback grating formed by shallow surface etching in the process of chip design and fabrication, the proposed structure of laser diode can realize regrowth freely and only micronscale precision i-line lithography is required. Such a structure with simple fabrication process and low manufacturing cost has great potential for commercial mass production.

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Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

High-efficiency edge-emitting laser diodes with oxidation confinement stripe structure

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Investigation of GaAs-Based Laser Diode Adopting an Al Composition Gradient Double Waveguide Structure and its Photoelectric Properties

P -Doped 1.3μm InAs∕GaAs Quantum-Dot Laser with a Low Threshold Current Density and High Differential Efficiency

Analysis of Threshold Characteristics of Short-wavelength Semiconductor Lasers

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

An Improved Multi-Layer Stopper in a GaN-based Laser Diode

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Current spreading structure of GaN-based vertical-cavity surface-emitting lasers

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode

Advantage Of Tapered And Graded Algan Electron Blocking Layer In Ingan-Based Blue Laser Diodes

Optimized Layers Design for AlGaN/GaN/InGaN Symmetrical Separate Confinement Heterojunction Multi-Quantum Well Laser Diode

High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm

Super-gain nanostructure with self-assembled well-wire complex energy-band engineering for high performance of tunable laser diodes

Design of a Multimode Interference Waveguide Semiconductor Laser Combining Gain Coupled Distributed Feedback Grating

Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.