Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

SM Wang,YH Shen,JX Xu,LG Hu,J Zhu,DR Yang,H Zhang,YW Zeng,JQ Yao

DOI: https://doi.org/10.1063/1.1707218

IF: 4

2004-01-01

Applied Physics Letters

Abstract:It is reported that a normal InGaAs laser diode (LD) operating at 980 nm possesses a second harmonic at 490 nm and a strong deep-UV emission at room temperature. By comparing with the radiation from cadmium sulphide (CdS) nanoparticles and nanowires, it is found that the UV emission from the LD can be attributed to a characterized radiation of nanoscaled semiconductors. By doping different semiconductor nanomaterials into the active layers of the LD and taking some effective techniques, such as cavity optimization, the wavelength, and the power output of the UV emission could be adjusted.