Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region

Room-temperature Continuous-Wave Electrically Pumped InGaN/GaN Quantum Well Blue Laser Diode Directly Grown on Si

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Electrically Injected GaN-on-Si Blue Microdisk Laser Diodes

Design and Growth of GaN-based Blue and Green Laser Diodes

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

Performance Improvement of InGaN-based Laser Grown on Si by Suppressing Point Defects.

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Tunable Quantum Dot Lasers Grown Directly on Silicon

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

III-nitride semiconductor lasers grown on Si

Characterization of GaInN/GaN layers for green emitting laser diodes

InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)

GaN-based Distributed Feedback Laser Diodes Grown on Si

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

376 nm High-Power UV-A Laser Diodes With GaN Waveguide

High-performance Vertical GaN-based Near-Ultraviolet Light-Emitting Diodes on Si Substrates

Room-Temperature Electrically Injected AlGaN-Based Near-Ultraviolet Laser Grown on Si

High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates