Abstract:Heavy silicon-doping in GaN generally causes a rough surface and saturated conductivity, while heavily silicon-doped n++-AlGaN with ≤5% aluminum can maintain an atomically flat surface and exhibit enhanced conductivity. Given this major advantage, we propose using multiple pairs of heavily silicon-doped n++-Al0.01Ga0.99N and undoped GaN instead of widely used multiple pairs of heavily silicon-doped n++-GaN and undoped GaN for the fabrication of a lattice-matched distributed Bragg reflector (DBR) by using an electrochemical (EC) etching technique, where the lattice mismatch between Al0.01Ga0.99N and GaN can be safely ignored. By means of using the EC etching technique, the n++-layers can be converted into nanoporous (NP) layers whilst the undoped GaN remains intact, leading to a significantly high contrast in refractive index between NP-layer and undoped GaN and thus forming a DBR. Our work demonstrates that the NP-Al0.01Ga0.99N/undoped GaN-based DBR exhibits a much smoother surface, enhanced reflectivity and a wider stopband than the NP-GaN/undoped GaN-based DBR. Furthermore, the NP-Al0.01Ga0.99N/undoped GaN-based DBR sample with a large size (up to 1 mm in width) can be obtained, while a standard NP-GaN/undoped GaN-based DBR sample obtained is typically on a scale of a few 100 μm in width. Finally, a series of DBR structures with high performance, ranging from blue to dark yellow, was demonstrated by using multiple pairs of n++-Al0.01Ga0.99N and undoped GaN.

Focused Ion Beam Etched Nitride/Air Dbrs As Cavity Mirror Facets of Violet Ingan/Gan Multiple-Quantum Well Laser Diodes

Etched facet and semiconductor/air DBR facet of a AlGaInP laser diode prepared by focused ion beam milling

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

Micro‐zone Optical Measurements on GaN Based Nitride/air Distributed Bragg Reflector (DBR) Mirrors Made by Focused Ion Beam Milling

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Design of Synthesized DBRs for Long-Wavelength InP-Based Vertical-Cavity Surface-Emitting Lasers

Influence Of Patterned Tio2/Sio2 Dielectric Multilayers For Back And Front Mirror Facets On Gan-Based Laser Diodes

GaN-based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings

Characteristics of InGaN multiple quantum well blue-violet laser diodes

Room-temperature DBR-free VCSEL operation on an InGaN/GaN thin-film platform with a monolithic surface grating

Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Short cavity InGaN-based laser diodes with cavity length below 300 μm

AlGaN-based UV-C Distributed Bragg Reflector with a Λ-Cavity Designed for an External Cavity Structure Electron-Beam-pumped VCSEL

Fabrication and Characterization of High Power Ingan Blue-Violet Lasers with an Array Structure

III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors

480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region