Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultra-high-performance semiconductor lasers for many key novel applications, either as stand-alone sources or as on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb and other material platforms have been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz LWDM frequency intervals in the 1300 nm band with record performance parameters, including side mode suppression ratios as high as 52.7 dB, continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at 70°C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz (2.5-25 GHz). The devices are also capable of operating isolator-free under very high external reflection levels of up to -12.3 dB whilst maintaining the high spectral and ultra-low RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, thus universally applicable across different material platforms and wavelength bands.

Etched facet and semiconductor/air DBR facet of a AlGaInP laser diode prepared by focused ion beam milling

Focused Ion Beam Etched Nitride/Air Dbrs As Cavity Mirror Facets of Violet Ingan/Gan Multiple-Quantum Well Laser Diodes

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

GaAs/AlAs DBR optimized growth by GSMBE and its characterization

Micro‐zone Optical Measurements on GaN Based Nitride/air Distributed Bragg Reflector (DBR) Mirrors Made by Focused Ion Beam Milling

Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

1.3 Μm Laterally-Coupled Distributed Feedback Laser with a Triangular Prism Etched Facet

Cleaved Laser Facets on Free‐standing InGaN LD Membrane Created by Laser Lift‐off and Structural Characterisation of the Membrane

Design of Synthesized DBRs for Long-Wavelength InP-Based Vertical-Cavity Surface-Emitting Lasers

Influence Of Patterned Tio2/Sio2 Dielectric Multilayers For Back And Front Mirror Facets On Gan-Based Laser Diodes

1.55-/Spl Mu/m AlGaInAs-InP Laterally Coupled Distributed Feedback Laser

Facet Coating for 808 Nm Al-containing Semiconductor Laser Diodes

1.3 Μm 10-Wavelength Laterally Coupled Distributed Feedback Laser Array with High-Duty-Ratio Gratings

Distributed feedback semiconductor lasers and their application in photonic integrated devices

Facet passivation process of high-power laser diodes by plasma cleaning and ZnO film

High-efficiency edge-emitting laser diodes with oxidation confinement stripe structure

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

The Fabrication Of Gan-Based Optical Cavity Mirrors By Focused Ion Beam Milling

880 Nm Semiconductor Laser Diode Arrays and Fiber Coupling Module