Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Influence Of Patterned Tio2/Sio2 Dielectric Multilayers For Back And Front Mirror Facets On Gan-Based Laser Diodes

Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes

Characteristics of GaN Based Laser Diode

Facet Coating for 808 Nm Al-containing Semiconductor Laser Diodes

Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure

Focused Ion Beam Etched Nitride/Air Dbrs As Cavity Mirror Facets of Violet Ingan/Gan Multiple-Quantum Well Laser Diodes

Improved Process of GaN-based Ridge Laser Diodes Based on Back-ward Exposure

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Fabrication of 808 Nm Al-containing Semiconductor Laser Diode High Damage Threshold Facet Coating

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Development of high‐reflectivity and antireflection dielectric multilayer mirrors for AlGaN‐based ultraviolet‐B laser diodes and their device applications

Etched facet and semiconductor/air DBR facet of a AlGaInP laser diode prepared by focused ion beam milling

Improvement of Crystallinity and Luminescence of GaN-based Laser Diode Structure with Suppressed Curvature Variation in Active Layers

Gan-Based Violet Laser Diodes Grown on Free-Standing Gan Substrate

The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes

Cleaved Laser Facets on Free‐standing InGaN LD Membrane Created by Laser Lift‐off and Structural Characterisation of the Membrane

Facet passivation process of high-power laser diodes by plasma cleaning and ZnO film

GaN-based Distributed Feedback Laser Diodes Grown on Si